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參數(shù)資料
| 型號： | RMWB33001 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 衰減器 |
| 英文描述： | 33 GHz Buffer Amplifier MMIC |
| 中文描述： | 32000 MHz - 35000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 3 X 1.20 MM, DIE |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 234K |
| 代理商： | RMWB33001 |
2004 Fairchild Semiconductor Corporation
RMWB33001 Rev. C
R
Figure 2. Schematic of Application Circuit
Note:
1:
Detector delivers >0.1V DC into 3k
load resistor for > +18dBm output power. If output power level detection is not desired, do not connect to detector bond pad.
Figure 3. Chip Layout and Bond Pad Locations
Chip Size is 3.19mm x 1.19mm X 100μm. Back of chip is RF and DC Ground.
Ground
(Back of Chip)
RF IN
RF OUT
Bond Wires
100 pF
100 pF
100 pF
100 pF
Bond Wires
10,000 pF
100 pF
Bond Wires
Bond Wires
Drain Supply
Vd=4 V
Gate Supply Vg
10,000 pF
100 pF
Output Power
Detector Voltage Vdet
10,000 pF
MMIC Chip
3 k
0.00
0.10
0.415
0.57
0.725
1.09
1.19
1.09
0.00
0.10
0.415
0.57
0.725
1.19
0.10
0.60
2.85 3.09 3.19
3.19
0.00
0.82
1.34
1.83
2.58
0.00
Dimensions in mm
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