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參數(shù)資料
| 型號： | RMPA61810 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 衰減器 |
| 英文描述： | Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC |
| 中文描述： | 6000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 6.55 X 2.67 MM, 0.10 MM HEIGHT, DIE-6 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 550K |
| 代理商： | RMPA61810 |
2004 Fairchild Semiconductor Corporation
RMPA61810 Rev. B
R
Figure 4. Recommended Assembly and Bonding Diagram
Recommended Procedure for Biasing and Operation
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER. THIS AMPLIFIER IS AN ESD SENSITIVE DEVICE.
VG
VG
VG
RF
IN
VD
VG
VD
VD
VD
RF OUT
RF IN
0.001" x 0.005" or 0.002" x 0.004" Au Ribbon,
4 Places
100pF Capacitor, 0.015" x 0.015" x 0.005",
4 Places
0.001" Dia. Au Wire, Typ.
50
, 0.015" TH Alumina Substrate,
2 Places
0.010" TH Cu Shim or Ridge
0.025" TH Cu-Mo-Cu or Cu-W Carrier
0.020" x 0.050" x 0.005" Stand-Off,
4 Places
0.01
μ
F Capacitor, 0.063" x 0.031" x 0.031",
4 Places
RMPA61810
RF
OUT
The following procedure must be followed to properly test
the amplifier:
Step 1:
-1.5V) to terminal Vg.
Slowly apply Gate Voltage (typical Vpinch-off =
Step 2:
monitor drain current Ids. Adjust negative voltage Vg to set
the drain current (Ids) to approximately 600 mA. Adjust the
drain voltage Vg to nominal +8 volts (adjust Gate Voltage
Vg, if needed, to maintain the drain current at Ids.
Slowly apply Drain Voltage at Vd (<+5 volts) and
Step 3:
signal may now be applied at the appropriate frequency
band.
After the bias condition is established, RF input
Step 4:
Follow Turn-off sequence:
(i) RF input power = off,
(ii) Vd = off,
(iii) Vg = off.
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