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參數(shù)資料
| 型號： | RMPA2259 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 衰減器 |
| 英文描述： | 28 dBm WCDMA PowerEdge Power Amplifier Module |
| 中文描述： | 1920 MHz - 1980 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | 4 X 4 MM, 1.50 MM HEIGHT, LEAD FREE, LCC-10 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 235K |
| 代理商： | RMPA2259 |
R
T
P
2005 Fairchild Semiconductor Corporation
RMPA2259 Rev. E
2
www.fairchildsemi.com
Absolute Ratings
1
Note:
1:
No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics
1
Notes:
1:
All parameters met at Tc = +25°C, Vcc = +3.4V, f = 1950MHz, and load VSWR
≤
1.2:1.
2:
All phase angles.
3:
Guaranteed by design.
Symbol
Parameter
Ratings
Units
V
CC1
, V
CC2
V
ref
V
mode
P
IN
T
STG
Supply Voltages
5.0
V
Reference Voltage
2.6 to 3.5
V
Power Control Voltage
3.5
V
RF Input Power
+10
dBm
Storage Temperature
-55 to +150
°C
Symbol
f
WCDMA Operation
Gp
Parameter
Min
1920
Typ
Max
1980
Units
MHz
Comments
Operating Frequency
Power Gain
26.5
24
dB
dB
dBm
dBm
%
%
%
mA
mA
Po=+28dBm; Vmode=0V
Po=+16dBm; Vmode
≥
2.0V
Vmode=0V
Vmode
≥
2.0V
Vmode=0V
Vmode
≥
2.0V
Vmode
≥
2.0V, Vcc=1.4V
Po=+28dBm, Vmode=0V
Po=+16dBm, Vmode
≥
2.0V
WCDMA Modulation 3GPP
3.2 03-00 DPCCH+1 DCDCH
Po=+28dBm; Vmode=0V
Po=+16dBm; Vmode
≥
2.0V
Po=+28dBm; Vmode=0V
Po=+16dBm; Vmode
≥
2.0V
Po
Linear Output Power
28
16
PAEd
PAEd (digital) @ +28dBm
PAEd (digital) @ +16dBm
PAEd (digital) @ +16dBm
High Power Total Current
Low Power Total Current
Adjacent Channel Leakage Ratio
40
9
20
450
130
Itot
ACLR1
±5.0MHz Offset
-40
-43
-53
-66
dBc
dBc
dBc
dBc
ACLR2
±10.0MHz Offset
General Characteristics
VSWR
Input Impedance
NF
Noise Figure
Rx No
Receive Band Noise Power
2.0:1
3
-139
dB
dBm/Hz Po
≤
+28dBm;
2110 to 2170MHz
dBc
Po
≤
+28dBm
dBc
Load VSWR
≤
5.0:1
No permanent damage
°C
2fo-5fo
S
Harmonic Suppression
3
Spurious Outputs
2,3
Ruggedness w/ Load Mismatch
3
Case Operating Temperature
DC Characteristics
Iccq
Quiescent Current
Iref
Reference Current
Icc(off)
Shutdown Leakage Current
-30
-60
10:1
85
Tc
-30
50
5
1
mA
mA
μA
Vmode
≥
2.0V
Po
≤
+28dBm
No applied RF signal
8
5
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PDF描述 |
|---|---|
| RMPA2263 | WCDMA Power Amplifier Module 1920-1980 MHz |
| RMPA2265 | Dual Band WCDMA Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz |
| RMPA2271 | WCDMA/UMTS Power Edge Power Amplifier Module with Integrated Power Detector |
| RMPA2450 | 2.4-2.5 GHz GaAs MMIC Power Amplifier |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RMPA2259G | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RMPA2263 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:WCDMA Power Amplifier Module 1920-1980 MHz |
| RMPA2265 | 功能描述:射頻放大器 1850-1910 MHZ/1920- 1980 MHZ DUAL BAND RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| RMPA2266 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RMPA2271 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:WCDMA/UMTS Power Edge Power Amplifier Module with Integrated Power Detector |
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