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參數(shù)資料
| 型號： | RMPA2263 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 衰減器 |
| 英文描述： | WCDMA Power Amplifier Module 1920-1980 MHz |
| 中文描述： | 1920 MHz - 1980 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | 4 X 4 MM, 1.50 MM HEIGHT, LEAD FREE, LCC-10 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 135K |
| 代理商： | RMPA2263 |
2004 Fairchild Semiconductor Corporation
RMPA2263
i-Lo
Rev. G
1
www.fairchildsemi.com
May 2005
R
iL
o
RMPA2263
i-Lo
WCDMA Power Amplifier Module
1920–1980 MHz
Features
■
40% WCDMA efficiency at +28 dBm Pout
■
14% WCDMA efficiency (85 mA total current) at +16 dBm
Pout
■
Linear operation in low-power mode up to +19 dBm
■
Low quiescent current (Iccq): 25 mA in low-power mode
■
Meets UMTS/WCDMA performance requirements
■
Meets HSDPA performance requirements
■
Single positive-supply operation with low power and shut-
down modes
– 3.4V typical Vcc operation
– Low Vref (2.85V) compatible with advanced handset
chipsets
■
Compact Lead-free compliant LCC package –
(4.0 x 4.0 x 1.5 mm nominal)
■
Industry standard pinout
■
Internally matched to 50 Ohms and DC blocked RF input/
output
General Description
The RMPA2263 Power Amplifier Module (PAM) is Fairchild’s
latest innovation in 50 Ohm matched, surface mount modules
targeting UMTS/WCDMA/HSDPA applications. Answering the
call for ultra-low DC power consumption and extended battery
life in portable electronics, the RMPA2263 uses novel
proprietary circuitry to dramatically reduce amplifier current at
low to medium RF output power levels (< +16 dBm), where the
handset most often operates. A simple two-state Vmode control
is all that is needed to reduce operating current by more than
50% at 16 dBm output power, and quiescent current (Iccq) by
as much as 70% compared to traditional power-saving
methods. No additional circuitry, such as DC-to-DC converters,
are required to achieve this remarkable improvement in
amplifier efficiency. Further, the 4
x
4
x
1.5 mm LCC package is
pin-compatible and a drop-in replacement for last generation 4
x
4 mm PAMs widely used today, minimizing the design time to
apply this performance-enhancing technology. The multi-stage
GaAs Microwave Monolithic Integrated Circuit (MMIC) is
manufactured using Fairchild RF’s InGaP Heterojunction
Bipolar Transistor (HBT) process.
Device
Functional Block Diagram
Vref
Vmode
RF IN
GND
Vcc1
RF OUT
GND
GND
GND
7
6
8
9
10
4
3
2
BIAS/MODE SWITCH
1
5
Vcc2
11 (paddle ground on package bottom)
INPUT
MATCH
OUTPUT
MATCH
MMIC
(Top View)
PRELIMINARY
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RMPA2265 | Dual Band WCDMA Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz |
| RMPA2271 | WCDMA/UMTS Power Edge Power Amplifier Module with Integrated Power Detector |
| RMPA2450 | 2.4-2.5 GHz GaAs MMIC Power Amplifier |
| RMPA2451 | 2.4?2.5 GHz GaAs MMIC Power Amplifier |
| RMPA2451-TB | 2.4?2.5 GHz GaAs MMIC Power Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RMPA2265 | 功能描述:射頻放大器 1850-1910 MHZ/1920- 1980 MHZ DUAL BAND RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| RMPA2266 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RMPA2271 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:WCDMA/UMTS Power Edge Power Amplifier Module with Integrated Power Detector |
| RMPA2450 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:2.4-2.5 GHz GaAs MMIC Power Amplifier |
| RMPA2451 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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