參數(shù)資料
型號： RMPA1963
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 衰減器
英文描述： US-PCS CDMA, CDMA2000-1X and WCDMA Power Amplifier Module
中文描述： 1850 MHz - 1910 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
封裝： 4 X 4 MM, 1.50 MM HEIGHT, LEAD FREE, LCC-10
文件頁數(shù)： 2/7頁
文件大?。?/td> 102K
代理商： RMPA1963
2
www.fairchildsemi.com
RMPA1963
i-Lo
Rev. H
R
iL
o
Absolute Maximum Ratings
1
Note:
1.
No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics
1
Notes:
1.
2.
3.
All parameters met at Tc = +25°C, Vcc = +3.4V, Vref = 2.85V and load VSWR
≤
1.2:1, unless otherwise noted.
All phase angles.
Guaranteed by design.
Symbol
Vcc1, Vcc2
Vref
Vmode
Pin
Tstg
Parameter
Value
5.0
2.6 to 3.5
3.5
+10
-55 to +150
Units
V
V
V
dBm
°C
Supply Voltages
Reference Voltage
Power Control Voltage
RF Input Power
Storage Temperature
Symbol
f
CDMA/WCDMA Operation
Gp
Power Gain
Parameter
Min
1850
Typ
Max
1910
Units
MHz
Comments
Operating Frequency
28
23
dB
dB
dBm
dBm
%
%
mA
mA
Po=+28dBm; Vmode=0V
Po=+16dBm; Vmode
≥
2.0V
Vmode=0V
Vmode
≥
2.0V
Vmode=0V
Vmode
≥
2.0V
Po=+28dBm, Vmode=0V
Po=+16dBm, Vmode
≥
2.0V
IS-95 A/B Modulation
Po=+28dBm; Vmode=0V
Po=+16dBm; Vmode
≥
2.0V
Po=+28dBm; Vmode=0V
Po=+16dBm; Vmode
≥
2.0V
WCDMA Modulation 3GPP
3.2 03-00 DPCCH +1 DCDCH
Po=+28dBm; Vmode=0V
Po=+16dBm; Vmode
≥
2.0V
Po=+28dBm; Vmode=0V
Po=+16dBm; Vmode
≥
2.0V
Po
Linear Output Power
28
16
PAEd
PAEd (digital) @ +28dBm
PAEd (digital) @ +16dBm
High Power Total Current
Low Power Total Current
Adjacent Channel Power Ratio
±1.25MHz Offset
39
13
470
85
Itot
CDMA
ACPR1
-50
-55
-60
-65
dBc
dBc
dBc
dBc
ACPR2
±2.25MHz Offset
WCDMA
Adjacent Channel Leakage Ratio
ACLR1
±5.00MHz Offset
-40
-43
-53
-55
dBc
dBc
dBc
dBc
ACLR2
±10.00MHz Offset
General Characteristics
VSWR
Input Impedance
NF
Noise Figure
Rx No
Receive Band Noise Power
2.0:1
4
-139
2.5:1
dB
dBm/Hz
Po
≤
+28dBm;
1930 to 1990MHz
Po
≤
+28dBm
Po
≤
+28dBm
Load VSWR
≤
5.0:1
No permanent damage.
2fo
Harmonic Suppression
Harmonic Suppression
Spurious Outputs
2,3
Ruggedness w/ Load Mismatch
3
Case Operating Temperature
DC Characteristics
Iccq
Quiescent Current
Iref
Reference Current
Icc(off)
Shutdown Leakage Current
-40
-55
dBc
dBc
dBc
3fo-5fo
S
-60
10:1
85
Tc
-30
°C
25
7
1
mA
mA
μA
Vmode
≥
2.0V
Po
≤
+28dBm
No applied RF signal
5
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