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參數(shù)資料
| 型號(hào)： | RMPA1963 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 衰減器 |
| 英文描述： | US-PCS CDMA, CDMA2000-1X and WCDMA Power Amplifier Module |
| 中文描述： | 1850 MHz - 1910 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | 4 X 4 MM, 1.50 MM HEIGHT, LEAD FREE, LCC-10 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 102K |
| 代理商： | RMPA1963 |
2005 Fairchild Semiconductor Corporation
RMPA1963
i-Lo
Rev. H
1
www.fairchildsemi.com
May 2005
R
iL
o
RMPA1963
i-Lo
US-PCS CDMA, CDMA2000-1X and WCDMA
Power Amplifier Module
Features
■
38% CDMA/WCDMA efficiency at +28 dBm Pout
■
14% CDMA/WCDMA efficiency (85 mA total current) at
+16 dBm Pout
■
Meets HSDPA performance requirements
■
Linear operation in low-power mode up to +19 dBm
■
Low quiescent current (Iccq): 25 mA in low-power mode
■
Single positive-supply operation with low power and shut-
down modes
3.4V typical Vcc operation
Low Vref (2.85V) compatible with advanced handset
chipsets
■
Compact Lead-free compliant LCC package –
(4.0 X 4.0 x 1.5 mm nominal)
■
Industry standard pinout
■
Internally matched to 50 Ohms and DC blocked RF
input/output
■
Meets IS-95/CDMA2000-1XRTT/WCDMA performance
requirements
General Description
The RMPA1963 Power Amplifier Module (PAM) is Fairchild’s lat-
est innovation in 50 Ohm matched, surface mount modules tar-
geting US-PCS CDMA/WCDMA/HSDPA and Wireless Local
Loop (WLL) applications. Answering the call for ultra-low DC
power consumption and extended battery life in portable elec-
tronics, the RMPA1963 uses novel proprietary circuitry to dra-
matically reduce amplifier current at low to medium RF output
power levels (< +16 dBm), where the handset most often oper-
ates. A simple two-state Vmode control is all that is needed to
reduce operating current by more than 50% at 16 dBm output
power, and quiescent current (Iccq) by as much as 70% com-
pared to traditional power-saving methods. No additional cir-
cuitry, such as DC-to-DC converters, are required to achieve
this remarkable improvement in amplifier efficiency. Further, the
4x4x1.5 mm LCC package is pin-compatible and a drop-in
replacement for last generation 4x4 mm PAMs widely used
today, minimizing the design time to apply this performance-
enhancing technology. The multi-stage GaAs Microwave Mono-
lithic Integrated Circuit (MMIC) is manufactured using Fairchild
RF’s InGaP Heterojunction Bipolar Transistor (HBT) process.
Device
Functional Block Diagram
Vref
Vmode
RF IN
GND
Vcc1
RF OUT
GND
GND
GND
7
6
8
9
10
4
3
2
BIAS/MODE SWITCH
1
5
Vcc2
11 (paddle ground on package bottom)
INPUT
MATCH
OUTPUT
MATCH
MMIC
(Top View)
PRELIMINARY
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