參數(shù)資料
型號(hào): RMPA0967
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 衰減器
英文描述: Cellular CDMA, CDMA2000-1X and WCDMA Power Edge Power Amplifier Module
中文描述: 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
封裝: 3 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT, LEADLESS PACKAGE-8
文件頁數(shù): 4/8頁
文件大?。?/td> 142K
代理商: RMPA0967
4
www.fairchildsemi.com
RMPA0967 Rev. E
R
Efficiency Improvement Applications
In addition to high-power/low-power bias modes, the efficiency of the PA module can be significantly increased at backed-off RF
power levels by dynamically varying the supply voltage (Vcc) applied to the amplifier. Since mobile handsets and power amplifiers fre-
quently operate at 10-20 dB back-off, or more, from maximum rated linear power, battery life is highly dependent on the DC power
consumed at antenna power levels in the range of 0 to +16dBm. The reduced demand on transmitted RF power allows the PA supply
voltage to be reduced for improved efficiency, while still meeting linearity requirements for CDMA modulation with excellent margin.
High-efficiency DC-DC converters are now available to implement switched-voltage operation.
With the PA module in low-power mode (Vmode = +2.0V) at+16dBm output power and supply voltages reduced from 3.4V nominal
down to 1.2V, power-added efficiency is more than doubled from 9.5 percent to nearly 25 percent (Vcc = 1.2V) while maintaining a
typical ACPR1 of –52dBc and ACPR2 of less than –61dBc. Operation at even lower levels of Vcc supply voltage are possible with a
further restriction on the maximum RF output power.
Recommended Operating Conditions
DC Turn On Sequence
1) Vcc1 = Vcc2 = 3.4V (typical)
2) Vref = 2.85V (typical)
3) High-Power: Vmode = 0V (Pout > 16 dBm)
Low-Power: Vmode = 2.0V (Pout < 16 dBm)
Parameter
Symbol
Min
Typical
Max
Units
Operating Frequency
f
824
849
MHz
Supply Voltage
Vcc1, Vcc2
3.0
3.4
4.2
V
Reference Voltage
(operating)
Vref
2.7
2.85
3.1
V
(shutdown)
0
0.5
V
Bias Control Voltage
(low-power)
Vmode
1.8
2.0
3.0
V
(high-power)
0
0.5
V
Linear Output Power
(high-power)
Pout
+28
dBm
(low-power)
+16
dBm
Case Operating Temperature
Tc
-30
+85
°C
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