參數(shù)資料
型號: RMPA0967
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 衰減器
英文描述: Cellular CDMA, CDMA2000-1X and WCDMA Power Edge Power Amplifier Module
中文描述: 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
封裝: 3 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT, LEADLESS PACKAGE-8
文件頁數(shù): 2/8頁
文件大小: 142K
代理商: RMPA0967
2
www.fairchildsemi.com
RMPA0967 Rev. E
R
Absolute Ratings
1
Note:
1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics
1
Notes:
1. All parameters met at Tc = +25°C, Vcc = +3.4V, Freq = 836.5MHz, Vref = 2.85V and load VSWR
O
1.2:1, unless
otherwise noted.
2. All phase angles.
3. Guaranteed by design.
Parameter
Symbol
Vcc1, Vcc2
Vref
Vmode
Pin
Tstg
Value
5.0
2.6 to 3.5
3.5
+10
-55 to +150
Units
V
V
V
dBm
°C
Supply Voltages
Reference Voltage
Power Control Voltage
RF Input Power
Storage Temperature
Parameter
Operating Frequency
C
CDMA Operation
Small-Signal Gain
Power Gain
Symbol Min
f
Typ
Max
849
Units
MHz
Comments
824
SSg
Gp
28
29
27
dB
dB
dB
dBm
dBm
%
%
%
mA
mA
Po = 0dBm
Po = +28dBm; Vmode = 0V
Po = +16dBm; Vmode
P
2.0V
Vmode = 0V
Vmode
P
2.0V
Vmode = 0V
Vmode
P
2.0V
Vmode
P
2.0V, Vcc = 1.4V
Po = +28dBm, Vmode = 0V
Po = +16dBm, Vmode
P
2.0V
IS-95 A/B Modulation
Po = +28dBm; Vmode = 0V
Po = +16dBm; Vmode
P
2.0V
Po = +28dBm; Vmode = 0V
Po = +16dBm; Vmode
P
2.0V
Linear Output Power
Po
28
16
PAEd (digital) @ +28dBm
PAEd (digital) @ +16dBm
PAEd (digital) @ +16dBm
High Power Total Current
Low Power Total Current
Adjacent Channel Power Ratio
±885KHz Offset
PAEd
39
9
25
480
130
Itot
ACPR1
-50
-52
-60
-70
dBc
dBc
dBc
dBc
±1.98MHz Offset
ACPR2
AMPS Operation
Gain
Power-Added Efficiency (analog)
General Characteristics
Input Impedance
Noise Figure
Receive Band Noise Power
Harmonic Suppression
3
Spurious Outputs
2, 3
Ruggedness w/ Load Mismatch
3
Case Operating Temperature
DC Characteristics
Quiescent Current
Reference Current
Shutdown Leakage Current
Gp
PAEa
28
52
Po = +31dBm
Po = +31dBm
%
VSWR
NF
Rx No
2fo-5fo
S
2.0:1
4
-137
2.5:1
dB
dBm/Hz
dBc
dBc
Po
O
+28dBm; 869 to 894MHz
Po
O
+28dBm
Load VSWR < 5.0:1
No permanent damage.
-30
-60
10:1
85
Tc
-30
°C
Iccq
Iref
Icc(off)
60
5
1
mA
mA
μA
Vmode
P
2.0V
Po
O
+28dBm
No applied RF signal.
8
5
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