參數(shù)資料
型號(hào): RMPA0951AT
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): 衰減器
英文描述: 3V Cellular CDMA PowerEdge Power Amplifier Module
中文描述: 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
封裝: 6 X 6 MM, 1.50 MM HEIGHT, LCC-7
文件頁(yè)數(shù): 4/11頁(yè)
文件大?。?/td> 555K
代理商: RMPA0951AT
2004 Fairchild Semiconductor Corporation
RMPA0951AT Rev. D
R
With device marking oriented right side up, RF IN is on the left and RF OUT is on the right.
Vcc = +3.4V nominal. Vref = +3.0V nominal to obtain Iccq = 80 mA. Operation at lower or higher quiescent currents can be
achieved by decreasing or increasing Vref voltage relative to +3.0V.
First ground the PCB (GND terminal) and apply +3.4V to the collector supply terminals (Vcc1, Vcc2). Next apply +3.0V to
the reference supply (Vref terminal). Quiescent collector current with no RF applied will be about 80 mA. Reference supply
current with or without RF applied will be about 15 mA. When turning amplifier off, reverse power supply sequence.
Apply -20dBm RF input power at Cellular frequency (824-849 MHz). After making any initial small signal measurements at
this drive level, input power may be increased up to a maximum of +7dBm for large signal, analog (AMPS) or digital CDMA
measurements. Do not exceed +7dBm input power.
Figure 3. Evaluation Board Layout and Instructions
PCB Schematic
Figure 4. Evaluation Board Schematic
Vcc1
Vref
Vcc2
PCB Specifications:
Material: Rogers R04003
Dimensions: 2.0"x1.5"x0.032"
Metallization: 1/2 oz
Copper Cladding
RF OUT
C1*
3.3
μ
F
C2*
3.3
μ
F
(package base)
* Minimum bypass capacitance recommended for best linearity/low-noise performance.
Note: Addition of C3 bypass
capacitor on Vref pin
recommended to minimize
Rx band noise
1
2
3
6
5
4
7
C3*
1000 pF
Vcc1
Vcc2
N/C
50
TRL
RMPA0951AT
50
TRL
Vref
SMA1
RF IN
SMA2
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