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參數(shù)資料
| 型號： | RMDA20420 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 衰減器 |
| 英文描述： | 20-42 GHz Broadband Driver Amplifier |
| 中文描述： | 20000 MHz - 42000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 1.72 X 0.76 MM, DIE |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 819K |
| 代理商： | RMDA20420 |
2004 Fairchild Semiconductor Corporation
RMDA20420 Rev. D
R
Figure 4. Recommended Assembly and Bonding Diagram
Recommended Procedure (for biasing and operation)
10,000pF
10,000pF
Vd1
Vd1
Vd2
Vd
(Positive)
INTERCHANGEABLE Vd BOND PADS
(Do not use Vd2)
INTERCHANGEABLE Vg BOND PADS
Die-Attach
80Au/20Sn
5 MIL THICK
ALUMINA
50
5 MIL THICK
ALUMINA
50
RF OUTPUT
RF INPUT
L<0.015"
4 places
Notes:
1. Die-attach with 80Au/20Sn.
2. Use 0.003" x 0.0005" gold ribbon for bonding.
3. RF input and output bonds should be less than 0.015" long with stress relief.
4. For currents > 370 mA connect all drain pads (Vd1, Vd3, & Vd4) to the 100 pF capacitor.
5. Back of chip is DC and RF ground.
6. Do not use Vd2 pad for drain bias connection.
L<0.015"
Vg2 alt
Vg2
Vg
(Negative)
Vg3
Vg4
100pF
100pF
2 MIL GAP
Vd3
Vd4
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE
DRAIN VOLTAGE (Vd) IS PRESENT CAN DAMAGE THE
AMPLIFIER.
The following sequence must be followed to properly test
the amplifier:
Step 1:
Turn off RF input power.
Step 2:
the chip carrier. Slowly apply negative gate bias supply
voltage of -1.5V to Vg.
Connect the DC supply grounds to the ground of
Step 3:
+3.5V to Vd.
Slowly apply positive drain bias supply voltage of
Step 4:
of Idq = 350 mA.
Adjust gate bias voltage to set the quiescent current
Step 5:
signal may now be applied at the appropriate frequency
band.
After the bias condition is established, the RF input
Step 6:
Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
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