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參數(shù)資料
| 型號(hào)： | RMDA20420 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 衰減器 |
| 英文描述： | 20-42 GHz Broadband Driver Amplifier |
| 中文描述： | 20000 MHz - 42000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 1.72 X 0.76 MM, DIE |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 819K |
| 代理商： | RMDA20420 |
2004 Fairchild Semiconductor Corporation
RMDA20420 Rev. D
R
Electrical Characteristics
1
Notes:
1. Operated at 25°C, 50
2. Typical range of the negative gate voltage is -0.9 to -0.15V to set typical Idq of 350mA.
3. Production measurements for small signal gain are made over a frequency range of 20 to 40GHz.
4. Saturated power measurements are not 100% tested, but guaranteed by design.
system, Vd = +3.5V, quiescent current (Idq) = 350mA.
Figure 1. Functional Block Diagram
Parameter
Min
20
2
-2
Typ
Max
42
5
-0.15
Units
GHz
V
V
Frequency Range
Drain Supply Voltage (Vd)
Gate Supply Voltage (Vg)
Small Signal Gain
(f = 20-22GHz)
(f = 22-42GHz)
Gain Variation vs.Frequency
Power Output at 1dB Compression
Power Output Saturated
Drain Current at P1dB Compression
Drain Current at Psat
Input Return Loss
(Pin = -20dBm)
Output Return Loss
(Pin = -20dBm)
3.5
-0.6
2
3
18
20
20
22
±2.5
21
23
355
362
12
dB
dB
dB
dBm
dBm
mA
mA
dB
4
22
10
dB
MMIC Chip
RF IN
RF OUT
Vd1
Vg1
Vg2 alt
Vd2
Vd3
Vd4
Vg4
Vg3
Vg2
DRAIN SUPPLY
(1st Stage)
DRAIN SUPPLY
(2nd-4th Stages)
GATE SUPPLY
(1st Stage)
GATE SUPPLY
(2nd-4th Stages)
GROUND
(Back of Chip)
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