參數資料
型號: RLF7030T-3R3M4R1
廠商: National Semiconductor Corporation
英文描述: PCB COPPER CLAD 18 X 18 2 SIDE
中文描述: N溝道場效應管同步降壓穩(wěn)壓控制器輸出電壓低
文件頁數: 4/22頁
文件大?。?/td> 602K
代理商: RLF7030T-3R3M4R1
Electrical Characteristics
(Continued)
V
= 5V unless otherwise indicated. Typicals and limits appearing in plain type apply for T
=T
=+25C. Limits appearing in
boldface type apply over full Operating Temperature Range. Datasheet min/max specification limits are guaranteed by design,
test, or statistical analysis.
Symbol
GATE DRIVE
I
Q-BOOT
Parameter
Conditions
Min
Typ
Max
Units
BOOT Pin Quiescent Current
BOOTV = 12V, EN = 0
0C to +125C
-40C to +125C
95
95
160
215
μA
R
DS1
Top FET Driver Pull-Up ON
resistance
Top FET Driver Pull-Down ON
resistance
Bottom FET Driver Pull-Up ON
resistance
Bottom FET Driver Pull-Down
ON resistance
BOOT-SW = 5V
@
350mA
3
R
DS2
BOOT-SW = 5V
@
350mA
2
R
DS3
BOOT-SW = 5V
@
350mA
3
R
DS4
BOOT-SW = 5V
@
350mA
2
OSCILLATOR
f
OSC
PWM Frequency
R
FADJ
= 590k
R
FADJ
= 88.7k
R
FADJ
= 42.2k
, 0C to +125C
R
FADJ
= 42.2k
, -40C to +125C
R
FADJ
= 17.4k
R
FADJ
= 11.3k
f
PWM
= 300kHz
f
PWM
= 600kHz
50
300
600
600
1400
2000
90
88
kHz
500
490
700
700
D
Max Duty Cycle
%
LOGIC INPUTS AND OUTPUTS
V
SD-IH
SD Pin Logic High Trip Point
V
SD-IL
SD Pin Logic Low Trip Point
2.6
1.6
1.6
3.5
V
0C to +125C
-40C to +125C
FB Voltage Going Down
0C to +125C
-40C to +125C
FB Voltage Going Up
0C to +125C
-40C to +125C
1.3
1.25
V
V
PWGD-TH-LO
PWGD Pin Trip Points
0.413
0.410
0.430
0.430
0.446
0.446
V
V
PWGD-TH-HI
PWGD Pin Trip Points
0.691
0.688
0.710
0.710
35
110
0.734
0.734
V
V
PWGD-HYS
PWGD Hysteresis (LM2737 only) FB Voltage Going Down FB Voltage
Going Up
mV
Note 1:
Absolute maximum ratings indicate limits beyond which damage to the device may occur.
Operating ratings
indicate conditions for which the device
operates correctly.
Opearting Ratings
do not imply guaranteed performance limits.
Note 2:
The human body model is a 100pF capacitor discharged through a 1.5k resistor into each pin.
L
www.national.com
4
相關PDF資料
PDF描述
RLF7030T-4R7M3R4 PCB COPPER CLAD 3 X 4.5 2 SIDE
RLP03N06CLE 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場效應管)
RLD03N06CLE 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場效應管)
RLD03N06CLESM 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場效應管)
RLP03N06CLE 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
相關代理商/技術參數
參數描述
RLF7030T-3R3M4R1-PF 制造商:TDK 功能描述:Inductor SMD RLF7030 3,3uH 4,1A
RLF7030T-3R3M4R1-T 功能描述:3.3μH Shielded Wirewound Inductor 4.1A 20.88 mOhm Max Nonstandard 制造商:tdk corporation 系列:RLF-T 包裝:剪切帶(CT) 零件狀態(tài):有效 類型:繞線 材料 - 磁芯:鐵氧體 電感:3.3μH 容差:±20% 額定電流:4.1A 電流 - 飽和值:4.4A 屏蔽:屏蔽 DC 電阻(DCR):20.88 毫歐最大 不同頻率時的 Q 值:- 頻率 - 自諧振:- 等級:AEC-Q200 工作溫度:-40°C ~ 125°C 頻率 - 測試:100kHz 安裝類型:表面貼裝 封裝/外殼:非標準 大小/尺寸:0.287" 長 x 0.268" 寬(7.30mm x 6.80mm) 高度 - 安裝(最大值):0.126"(3.20mm) 標準包裝:1
RLF7030T-4R7M3R4 功能描述:固定電感器 4.7uH 3.4A RoHS:否 制造商:AVX 電感:10 uH 容差:20 % 最大直流電流:1 A 最大直流電阻:0.075 Ohms 工作溫度范圍:- 40 C to + 85 C 自諧振頻率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接類型:SMD/SMT 封裝 / 箱體:6.6 mm x 4.45 mm
RLF7030T-4R7M3R4-PF 制造商:TDK 功能描述:Inductor SMD RLF7030 4,7uH 3,4A
RLF7030T-4R7M3R4-T 功能描述:4.7μH Shielded Wirewound Inductor 3.4A 21.3 mOhm Max Nonstandard 制造商:tdk corporation 系列:RLF-T 包裝:剪切帶(CT) 零件狀態(tài):有效 類型:繞線 材料 - 磁芯:鐵氧體 電感:4.7μH 容差:±20% 額定電流:3.4A 電流 - 飽和值:3.5A 屏蔽:屏蔽 DC 電阻(DCR):21.3 毫歐最大 不同頻率時的 Q 值:- 頻率 - 自諧振:- 等級:AEC-Q200 工作溫度:-40°C ~ 125°C 頻率 - 測試:100kHz 安裝類型:表面貼裝 封裝/外殼:非標準 大小/尺寸:0.287" 長 x 0.268" 寬(7.30mm x 6.80mm) 高度 - 安裝(最大值):0.126"(3.20mm) 標準包裝:1