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參數(shù)資料
| 型號： | Q67060-S7216-A001 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | SMART LOWSIDE POWER SWITCH |
| 中文描述： | 智能LOWSIDE電源開關(guān) |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 251K |
| 代理商： | Q67060-S7216-A001 |
2004-02-02
Page 3
BTS 3118 N
Electrical Characteristics
Parameter
Symbol
Values
Unit
at
T
j
= 25°C, unless otherwise specified
Characteristics
min.
typ.
max.
Drain source clamp voltage
T
j
= - 40 ...+ 150,
I
D
= 10 mA
Off-state drain current
T
j
= -40 ... +150°C
V
DS
= 32 V,
V
IN
= 0 V
Input threshold voltage
I
D
= 0.
6
mA,
T
j
= 25 °C
I
D
= 0.
6
mA,
T
j
= 150 °C
On state input current
V
DS(AZ)
42
-
55
V
I
DSS
-
1.5
10
μA
V
IN(th)
1.3
0.8
1.7
-
2.2
-
V
I
IN(on)
R
DS(on)
-
10
30
μA
On-state resistance
V
IN
= 5 V,
I
D
= 2.17 A,
T
j
= 25 °C
V
IN
= 5 V,
I
D
= 2.17 A,
T
j
= 150 °C
On-state resistance
V
IN
= 10 V,
I
D
= 2.17 A,
T
j
= 25 °C
V
IN
= 10 V,
I
D
= 2.17 A,
T
j
= 150 °C
Nominal load current
V
DS
= 0.5 V,
T
j
< 150°C,
V
IN
= 10 V,
T
A
= 85 °C
Current limit (active if
V
DS
>2.5 V)
1)
V
IN
= 10 V,
V
DS
= 12 V,
t
m
= 200 μs
-
-
90
160
120
240
m
R
DS(on)
-
-
70
130
100
200
I
D(Nom)
2.17
-
-
A
I
D(lim)
10
15
20
1Device switched on into existing short circuit (see diagram Determination of ID(lim)). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 μs.
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