參數(shù)資料
型號(hào): Q67060-S7216-A001
廠商: INFINEON TECHNOLOGIES AG
英文描述: SMART LOWSIDE POWER SWITCH
中文描述: 智能LOWSIDE電源開關(guān)
文件頁數(shù): 1/10頁
文件大小: 251K
代理商: Q67060-S7216-A001
2004-0
2-02
Page 1
HITFET
=
BTS 3118 N
Smart Lowside Power Switch
Product Summary
Drain source voltage
V
DS
R
DS(on)
I
D(Nom)
E
AS
42
V
On-state resistance
100
m
Nominal load current
2.17
A
Clamping energy
250
mJ
Features
Logic Level Input
Input Protection (ESD)
Thermal shutdown
Overload protection
Short circuit protection
Overvoltage protection
Current limitation
Analog driving possible
VPS05163
1
2
3
4
Application
All kinds of resistive, inductive and capacitive loads in switching
or linear applications
μC compatible power switch for 12 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded
protection functions.
Gate-Driving
Unit
ESD
Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Overvoltage-
Protection
Current
Limitation
M
V
bb
In
Source
Drain
HITFET
Pin 1
Pin 2 and 4 (TAB)
Pin 3
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