參數(shù)資料
型號: Q67060-S7216-A001
廠商: INFINEON TECHNOLOGIES AG
英文描述: SMART LOWSIDE POWER SWITCH
中文描述: 智能LOWSIDE電源開關(guān)
文件頁數(shù): 2/10頁
文件大小: 251K
代理商: Q67060-S7216-A001
2004-02-02
Page 2
BTS 3118 N
Maximum Ratings at T
j
= 25°C, unless otherwise specified
Parameter
Drain source voltage
Symbol
V
DS
V
DS(SC)
Value
42
Unit
V
Drain source voltage for short circuit protection
T
j
= -40...150°C
Continuous input current
-0.2V
V
IN
10V
V
IN
< -0.2V or
V
IN
> 10V
Operating temperature
20
I
IN
no limit
|
I
IN
| 2
-40 ...+150
-55 ... +150
mA
T
j
T
stg
P
tot
°C
Storage temperature
Power dissipation
T
C
= 85 °C
Unclamped single pulse inductive energy
1)
Load dump protection
V
LoadDump2)
=
V
A
+
V
S
V
IN
= 0 and 10 V, t
d
= 400 ms,
R
I
= 2 ,
R
L
= 6 ,
V
A
= 13.5 V
E
lectro
s
tatic
d
ischarge voltage
(Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
3.8
W
E
AS
V
LD
250
50
mJ
V
V
ESD
2
kV
DIN humidity category, DIN 40 040
E
IEC climatic category; DIN IEC 68-1
40/150/56
Thermal resistance
junction - ambient:
@ min. footprint
@ 6 cm
2
cooling area
3)
R
thJA
125
72
K/W
junction-soldering point:
R
thJS
17
K/W
1 Not tested, specified by design.
2
V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for drain
connection. PCB mounted vertical without blown air.
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