參數(shù)資料
型號: PZ1418B30U
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN microwave power transistors
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: HERMETIC SEALED, MEATL CERAMIC, FM-2
文件頁數(shù): 9/16頁
文件大小: 131K
代理商: PZ1418B30U
1997 Feb 19
9
Philips Semiconductors
Product specification
NPN microwave power transistors
PZ1418B30U; PZ1721B25U;
PZ2024B20U
PZ2024B20U
Microwave performance up to T
mb
= 25
°
C in a common base class B wideband amplifier.
TYPE
NUMBER
f
(GHz)
V
CC
(V)
P
L
(W)
20
typ. 26
G
p
(dB)
6
typ. 7
η
C
(%)
35
typ. 42
Z
i
; Z
L
(
)
PZ2024B20U
2 to 2.4
28
see Figs 16 and 17
Fig.13 Wideband test circuit board for 2 to 2.4 GHz operation (PZ2024B20U).
Dimensions in mm.
Substrate: Epsilam printed-circuit board.
Thickness: 0.635 mm.
Permittivity:
ε
r
= 10.
dbook, full pagewidth
5.5
30
30
2.7 2.5
3.7
2.5
4.5
2.5
6
5
1.3
0.8
2
1.5
1.5
14
100 pF
(ATC)
6
5.5
5
0.8
2
2.5
3
4
output
50
input
50
MSA109
Fig.14 Load power as a function of input power;
typical values for PZ2024B20U.
Class-B operation; V
CC
= 28 V; T
mb
= 25
°
C.
handbook, halfpage
PL
(W)
2
4
6
0
0
Pi (W)
20
MGL016
2.2
2.4
f = 2 GHz
Fig.15 Load power, efficiency and VSWR as
functions of frequency; typical values
for PZ2024B20U.
Class-B operation; V
CC
= 28 V; T
mb
= 25
°
C; P
i
= 5 W.
2.0
35
25
40
PL
(W)
50
2
VSWR
f (GHz)
1
2.1
2.5
2.2
2.3
2.4
η
C
(%)
η
C
MGL015
VSWR
PL
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