參數(shù)資料
型號: PZ1418B30U
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN microwave power transistors
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: HERMETIC SEALED, MEATL CERAMIC, FM-2
文件頁數(shù): 3/16頁
文件大?。?/td> 131K
代理商: PZ1418B30U
1997 Feb 19
3
Philips Semiconductors
Product specification
NPN microwave power transistors
PZ1418B30U; PZ1721B25U;
PZ2024B20U
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
open emitter
open base
R
BE
= 0
open collector
65
40
15
35
3
4
45
+200
200
235
V
V
V
V
A
W
°
C
°
C
°
C
T
mb
75
°
C
Fig.2
Power derating curve as a function of
mounting base temperature.
handbook,
0
50
100
200
50
0
40
150
30
20
10
MGD970
Ptot
(W)
Tmb (
°
C)
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