參數(shù)資料
型號(hào)： PUMA2S1000M-35
元件分類(lèi)： SRAM
英文描述： 32K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CHMA66
封裝： CERAMIC, MODULE, PGA-66
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 555K
代理商： PUMA2S1000M-35
ISSUE 4.5 : August 2002
PUMA 2S1000 - 25/35/45
2
Capacitance (V
CC=5V±10%,TA=25
°C)
Parameter
Symbol
Test Condition
typ
max
Unit
Input Capacitance
C
IN
V
IN =0V
-
38
pF
I/O Capacitance:
C
I/O
V
I/O=0V
-
18
pF
Note:This parameter is calculated and not measured.
DC Electrical Characteristics (V
CC=5V±10%,TA=-55
°C to +125°C)
Parameter
Symbol
Test Condition
min
typ(1)
max Unit
I/P Leakage Current
I
LI1
V
IN=0V to VCC
-8
-
8
A
Output Leakage Current
8 bit
I
LO
CS(2)=V
IH or OE=VIH,VI/O=0V to VCC,WE
(2)=V
IL
-8
-
8
A
Average Supply Current
32 bit
I
CC32
CS(2)=V
IL, Min. cycle, II/O=0mA, 100% Duty.
-
660
mA
16 bit
I
CC16
As above
-
410
mA
8 bit
I
CC8
As above
-
285
mA
Standby Supply Current
TTL
I
SB
CS(2)=V
IH, Min Cycle.
-
160
mA
-L Version
I
SB2
CS(2)
≥V
CC-0.2V, 0.2V≥VIN≥VCC-0.2V
--
9
mA
Output Voltage Low
V
OL
I
OL=8.0mA
-
0.4
V
Output Voltage High
V
OH
I
OH=-4.0mA
2.4
-
V
Notes:
CS and WE above are accessed through CS1~4 and WE1~4 respectively. These inputs must be operated
simultaneously for 32 bit mode, in pairs for 16 bit mode and singly for 8 bit mode.
Recommended Operating Conditions
Parameter
Symbol
min
typ(1)
max
Unit
Supply Voltage
V
CC
4.5
5.0
5.5
V
Input High Voltage
V
IH
2.2
-
V
CC+0.5
V
Input Low Voltage
V
IL
-0.5
-
0.8
V
Operating Temperature
T
A
0
-
70
oC
T
AI
-40
-
85
oC(I suffixI)
T
AM
-55
-
125
oC(M, MB suffix)
DC OPERATING CONDITIONS
Absolute Maximum Ratings (1)
Voltage on any pin relative to V
SS
(2)
V
T
-0.5V to +7.0
V
Power Dissipation
P
T
4W
Storage Temperature
T
STG
-65 to +150
oC
Notes :
(1)Stresses above those listed may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
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