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參數(shù)資料
| 型號(hào)： | PTF080901 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| 中文描述： | LDMOS射頻功率場(chǎng)效應(yīng)晶體管90瓦，869-960兆赫 |
| 文件頁(yè)數(shù)： | 9/10頁(yè) |
| 文件大?。?/td> | 205K |
| 代理商： | PTF080901 |
Data Sheet
9
2004-04-05
PTF080901
Package Outline Specifications
Package 31248
Notes: Unless otherwise specified
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2.
Primary dimensions are mm. Alternate dimensions are inches.
3.
Pins: D = drain, S = source, G = gate
4.
Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
0.0381 [.0015]
2X 12.70
[.500]
19.43± 0.51
[.765± .020]
19.81± 0.20
[.780± .008]
S PH 1.58
[.062]
9.78
[.385]
S
G
D
( 45° X 2.72
[.107])
20.57
[.810]
-A-
3.61± 0.38
[.142± .015]
1.02
[.040]
0.51
[.020]
4.83± 0.51
[.190± .020]
P K G _248_1
C
CL
[.370 ]
LID 9.40
+-0.15
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| PTF080901E | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| PTF080901F | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| PTF10007 | 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| PTF10009 | 85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF080901E | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| PTF080901EF_DS2A | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| PTF080901F | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| PTF081301E | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz |
| PTF081301EF-03 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhanced High Power RF LDMOS FETs 130W,869-960MHz |
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