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參數(shù)資料
| 型號： | PTB20125 |
| 廠商： | ERICSSON |
| 英文描述： | 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor |
| 中文描述： | 100瓦，1.8-2.0 GHz的PCN / PCS的功率晶體管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 235K |
| 代理商： | PTB20125 |
e
1
Description
The 20125 is an NPN, push-pull RF power transistor intended for 26
Vdc class AB operation from 1.8 to 2.0 GHz. Rated at 100 watts PEP
minimum output power, it is specifically intended for operation as a
final stage in CDMA or TDMA systems. Ion implantation, nitride surface
passivation and gold metallization ensure excellent device reliability.
100% lot traceability is standard.
100 Watts, 1.8–2.0 GHz
Class AB Characteristics
40% Collector Efficiency at 100 Watts
Gold Metallization
Silicon Nitride Passivated
PTB 20125
100 Watts, 1.8–2.0 GHz
PCN/PCS Power Transistor
Package 20225 *
20125
LOTCODE
5
1750
6
7
8
9
10
11
12
1800
1850
1900
1950
2000
2050
Frequency (MHz)
G
20
40
60
80
100
120
140
O
V
CC
= 26 V
I
CQ
= 200 mA
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Power (W)
Efficiency (%)
Gain (dB)
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
55
Vdc
Collector-Base Voltage
V
CBO
55
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
14
Adc
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
P
D
400
2.3
Watts
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
R
θ
JC
0.44
°C/W
* This product not recommended or specified for CW or class A operation. Recommend two PTB 20175 for these applications.
5/19/98
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTB20127 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20134 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20135 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:85 Watts, 925-960 MHz Cellular Radio RF Power Transistor |
| PTB20141 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20144 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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