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參數(shù)資料
| 型號： | PTB20111 |
| 廠商： | ERICSSON |
| 英文描述： | 85 Watts, 860-900 MHz Cellular Radio RF Power Transistor |
| 中文描述： | 85瓦，860-900兆赫蜂窩無線電射頻功率晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 47K |
| 代理商： | PTB20111 |
e
1
0
20
40
60
80
100
0
4
8
12
16
Input Power (Watts)
O
V
CC
= 25 V
I
CQ
= 200 mA
f = 900 MHz
Typical Output Power vs. Input Power
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
65
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
20
Adc
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
P
D
159
0.91
Watts
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
R
θ
JC
1.1
°C/W
PTB 20111
85 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
Description
The 20111 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 860 to 900 MHz. Rated at 85
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
25 Volt, 860–900 MHz Characteristics
- Output Power = 85 Watts
- Collector Efficiency = 50% at 85 Watts
- IMD = -30 dBc Max at 60 W(PEP)
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Package 20216
20111
LOTCODE
9/28/98
相關PDF資料 |
PDF描述 |
|---|---|
| PTB20125 | 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor |
| PTB20134 | 30 Watts, 860-900 MHz Cellular Radio RF Power Transistor |
| PTB20141 | 18 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor |
| PTB20144 | 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor |
| PTB20145 | 9 Watts, 915-960 MHz Cellular Radio RF Power Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PTB20125 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor |
| PTB20127 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20134 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20135 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:85 Watts, 925-960 MHz Cellular Radio RF Power Transistor |
| PTB20141 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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