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參數(shù)資料
| 型號： | PTB20095 |
| 廠商： | ERICSSON |
| 英文描述： | 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor |
| 中文描述： | 15瓦，915-960兆赫蜂窩無線電射頻功率晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 44K |
| 代理商： | PTB20095 |
e
1
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
6.7
Adc
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
P
D
65
0.4
Watts
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
R
θ
JC
2.7
°C/W
PTB 20095
15 Watts, 915–960 MHz
Cellular Radio RF Power Transistor
20095
LOTCODE
Description
The 20095 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 915 to 960 MHz frequency
band. Rated at 15 watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
15 Watts, 915–960 MHz
Class AB Characteristics
Specified 25 Volts, 960 MHz Characteristics
- Output Power = 15 Watts
- Collector Efficiency = 50% Min at 15 Watts
Gold Metallization
Silicon Nitride Passivated
0
5
10
15
20
25
30
0.0
0.4
0.8
1.2
1.6
2.0
Input Power (Watts)
O
V
CC
= 25 V
I
CQ
= 100 mA
f = 960 MHz
Typical Output Power vs. Input Power
Package 20201
9/28/98
相關PDF資料 |
PDF描述 |
|---|---|
| PTB20097 | 40 Watts, 915-960 MHz Cellular Radio RF Power Transistor |
| PTB20101 | 175 Watts P-Sync, 470-860 MHz UHF TV Power Transistor |
| PTB20105 | 20 Watts, 925-960 MHz Cellular Radio RF Power Transistor |
| PTB20111 | 85 Watts, 860-900 MHz Cellular Radio RF Power Transistor |
| PTB20125 | 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTB20097 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:40 Watts, 915-960 MHz Cellular Radio RF Power Transistor |
| PTB20101 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20105 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20111 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20125 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor |
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