- 您現(xiàn)在的位置：買賣IC網 > PDF目錄378086 > PTB20079 (ERICSSON) 10 Watts, 1.6-1.7 GHz INMARSAT RF Power Transistor PDF資料下載
參數(shù)資料
| 型號： | PTB20079 |
| 廠商： | ERICSSON |
| 英文描述： | 10 Watts, 1.6-1.7 GHz INMARSAT RF Power Transistor |
| 中文描述： | 10瓦特，1.6-1.7 GHz的國際海事衛(wèi)星組織射頻功率晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 184K |
| 代理商： | PTB20079 |
e
1
0
2
4
6
8
10
12
14
16
0.00
0.50
1.00
1.50
2.00
Input Power (Watts)
O
f = 1.65 GHz
I
CQ
= 100 mA
+26V
+24V
+22V
Typical Output Power vs. Input Power
PTB 20079
10 Watts, 1.6–1.7 GHz
INMARSAT RF Power Transistor
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
50
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
1.4
Adc
Total Device Dissipation at Tflange = 25° C
Above 25° C derate by
P
D
52
0.29
Watts
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (Tflange = 70° C)
R
θ
JC
3.4
°C/W
20079
LOTCODE
Description
The 20079 is a class A/AB, NPN, silicon bipolar junction, internally-
matched, common emitter RF Power transistor intended for 26 Vdc
operation across 1.6 to 1.7 GHz frequency band. It is rated at 10
Watts minimum output power for PEP applications. Ion implantation,
nitride surface passivation and gold metallization ensure excellent
device reliability. 100% lot traceability is standard.
10 Watts, 1.6–1.7 GHz
Class A/AB Characteristics
38% Collector Efficiency at 10 Watts
Gold Metallization
Silicon Nitride Passivated
Package 20209
9/28/98
相關PDF資料 |
PDF描述 |
|---|---|
| PTB20080 | 25 Watts, 1.6-1.7 GHz RF Power Transistor |
| PTB20081 | 150 Watts, 470-860 MHz UHF TV Power Transistor |
| PTB20082 | 15 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor |
| PTB20091 | 30 Watts, 470-860 MHz UHF TV Linear Power Transistor |
| PTB20095 | 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PTB20080 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:25 Watts, 1.6-1.7 GHz RF Power Transistor |
| PTB20081 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20082 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20091 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20095 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:15 Watts, 915-960 MHz Cellular Radio RF Power Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復。