參數(shù)資料
型號: PTB20080
廠商: ERICSSON
英文描述: 25 Watts, 1.6-1.7 GHz RF Power Transistor
中文描述: 25瓦,1.6-1.7 GHz射頻功率晶體管
文件頁數(shù): 1/3頁
文件大小: 445K
代理商: PTB20080
e
1
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
50
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
3.4
Adc
Total Device Dissipation at Tflange = 25° C
Above 25° C derate by
P
D
123
0.7
Watts
W/°C
Storage Temperature Range
T
STG
150
°C
Thermal Resistance (Tflange = 70°C)
R
θ
JC
1.43
°C/W
0
10
20
30
40
0.0
0.5
1.0
Input Power (Watts)
1.5
2.0
2.5
3.0
3.5
O
0
20
40
60
80
E
V
CC
= 26 V
I
CQ
= 125 mA
f = 1.65 GHz
Typical Output Power & Efficiency vs. Input Power
PTB 20080
25 Watts, 1.6–1.7 GHz
RF Power Transistor
20080
EXXX
Description
ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internally-
matched RF power transistor intended for 26 Vdc operation from 1.6
to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP
applications. Ion implantation, nitride surface passivation and gold
metallization ensure excellent device reliability. 100% lot traceability
is standard.
25 Watts, 1.6–1.7 GHz
Class AB Characteristics
40% Collector Efficiency at 25 Watts
Gold Metallization
Silicon Nitride Passivated
Package 20209
9/28/98
相關(guān)PDF資料
PDF描述
PTB20081 150 Watts, 470-860 MHz UHF TV Power Transistor
PTB20082 15 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor
PTB20091 30 Watts, 470-860 MHz UHF TV Linear Power Transistor
PTB20095 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor
PTB20097 40 Watts, 915-960 MHz Cellular Radio RF Power Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PTB20081 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
PTB20082 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
PTB20091 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
PTB20095 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:15 Watts, 915-960 MHz Cellular Radio RF Power Transistor
PTB20097 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:40 Watts, 915-960 MHz Cellular Radio RF Power Transistor