參數(shù)資料
型號(hào): PSMN038
廠商: NXP Semiconductors N.V.
英文描述: N-channel enhancement mode field-effect transistor
中文描述: N溝道增強(qiáng)型場(chǎng)效應(yīng)管
文件頁數(shù): 2/13頁
文件大?。?/td> 271K
代理商: PSMN038
Philips Semiconductors
PSMN038-100K
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 16 January 2001
2 of 13
9397 750 07897
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
T
j
junction temperature
R
DSon
drain-source on-state resistance
Quick reference data
Conditions
T
j
= 25 to 150
°
C
T
sp
= 80
°
C;
Figure 2
and
3
T
sp
= 80
°
C;
Figure 1
Typ
33
Max
100
6.3
3.5
150
38
Unit
V
A
W
°
C
m
V
GS
= 10 V; I
D
= 5.2 A; T
j
= 25
°
C
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
I
DM
peak drain current
P
tot
total power dissipation
T
stg
storage temperature
T
j
operating junction temperature
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
sp
= 25
°
C; pulsed; t
p
10
μ
s
Limiting values
Conditions
T
j
= 25 to 150
°
C
Min
55
55
Max
100
±
20
6.3
50
3.5
+150
+150
Unit
V
V
A
A
W
°
C
°
C
T
sp
= 80
°
C
T
sp
= 25
°
C; pulsed; t
p
10
μ
s
T
sp
= 80
°
C
T
sp
= 80
°
C
3.1
50
A
A
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