型號(hào): | PSMN038 |
廠商: | NXP Semiconductors N.V. |
英文描述: | N-channel enhancement mode field-effect transistor |
中文描述: | N溝道增強(qiáng)型場(chǎng)效應(yīng)管 |
文件頁數(shù): | 2/13頁 |
文件大?。?/td> | 271K |
代理商: | PSMN038 |
相關(guān)PDF資料 |
PDF描述 |
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PSMN040-200W | N-channel TrenchMOS transistor |
PSMS05 | STANDARD CAPACITANCE TVS ARRAY |
PSMS05C | STANDARD CAPACITANCE TVS ARRAY |
PSMS12 | STANDARD CAPACITANCE TVS ARRAY |
PSMS12C | STANDARD CAPACITANCE TVS ARRAY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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PSMN038-100K | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS SiliconMAX standard level FET |
PSMN038-100K /T3 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
PSMN038-100K,518 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
PSMN038-100YLX | 制造商:NXP Semiconductors 功能描述:PSMN038-100YL/LFPAK/REEL7// - Tape and Reel 制造商:NXP Semiconductors 功能描述:MOSFET N-CH 100V 6.3A SO8 |
PSMN039-100YS | 制造商:NXP Semiconductors 功能描述:MOSFETN CH100V28.1ALFPAK 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,100V,28.1A,LFPAK 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,100V,28.1A,LFPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:28.1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):30.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; No. of Pins:4 ;RoHS Compliant: Yes |