型號: | PSMN005-75P |
廠商: | NXP SEMICONDUCTORS |
元件分類: | JFETs |
英文描述: | N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. |
中文描述: | 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
封裝: | PLASTIC, SC-46, 3 PIN |
文件頁數(shù): | 9/13頁 |
文件大?。?/td> | 271K |
代理商: | PSMN005-75P |
相關PDF資料 |
PDF描述 |
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PSW1211 | Interface IC |
PT-30DFA(MSOP) | 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU4105 with Lead Free Packaging |
相關代理商/技術參數(shù) |
參數(shù)描述 |
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PSMN005-75P,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
PSMN005-75P | 制造商:NXP Semiconductors 功能描述:MOSFET N TO-220 |
PSMN006-20K | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS SiliconMAX ultra low level FET |
PSMN006-20K /T3 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
PSMN006-20K,518 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |