參數(shù)資料
型號(hào)： PSMN005-75P
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology.
中文描述： 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁數(shù)： 4/13頁
文件大?。?/td> 271K
代理商： PSMN005-75P
Philips Semiconductors
PSMN005-75P/75B
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 26 April 2002
4 of 13
9397 750 09743
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Symbol Parameter
R
th(j-mb)
thermal resistance from junction to mounting base
Figure 4
R
th(j-a)
thermal resistance from junction to ambient
SOT78
SOT404
Thermal characteristics
Conditions
Min Typ Max Unit
-
-
0.65 K/W
vertical in still air
mounted on a printed circuit board;
minimum footprint
-
-
60
50
-
-
K/W
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
03af48
10-3
10-2
10-1
1
10-6
10-5
10-4
10-3
10-2
10-1
1
10
t
p
(s)
Z
th(j-mb)
(K/W)
single pulse
δ
= 0.5
0.2
0.1
0.05
0.02
tp
tp
T
T
P
t
δ
=
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSMN005-75P,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN005-75P 制造商:NXP Semiconductors 功能描述:MOSFET N TO-220
PSMN006-20K 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS SiliconMAX ultra low level FET
PSMN006-20K /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN006-20K,518 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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