參數(shù)資料
型號(hào)： PSMN005-75P
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology.
中文描述： 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁數(shù)： 3/13頁
文件大?。?/td> 271K
代理商： PSMN005-75P
Philips Semiconductors
PSMN005-75P/75B
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 26 April 2002
3 of 13
9397 750 09743
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
°
C; I
DM
is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa16
0
40
80
120
0
50
100
150
200
Tmb (
°
C)
Pder
(%)
03ah89
0
20
40
60
80
100
120
0
30
60
90
120
150
180
T
mb
(oC)
I
der
(%)
P
der
P
P
tot 25 C
°
)
-----------------------
100
%
×
=
I
der
I
I
D 25 C
°
)
-------------------
100
%
×
=
03ah91
1
10
102
103
1
10
102
V
DS
(V)
I
D
(A)
DC
100 ms
10 ms
Limit R
DSon
= V
DS
/I
D
1 ms
t
p
= 10 μs
100 μs
相關(guān)PDF資料
PDF描述
PSMN063-150 N-channel enhancement mode field-effect transistor
PSR-25 1000V Single N-Channel Hi-Rel MOSFET in a TO-204AA package; A IRFAG50 with Standard Packaging
PSW1111 -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7416 with Standard Packaging
PSW1211 Interface IC
PT-30DFA(MSOP) 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU4105 with Lead Free Packaging
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSMN005-75P,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN005-75P 制造商:NXP Semiconductors 功能描述:MOSFET N TO-220
PSMN006-20K 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS SiliconMAX ultra low level FET
PSMN006-20K /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN006-20K,518 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*