參數(shù)資料
型號： PSD813F4
英文描述： Flash In System Programmable Mirocomputer Peripherals(閃速，在系統(tǒng)可編程微控制器外圍器件，1M位閃速存儲器，256K位EEPROM，16K位SRAM)
中文描述： Flash在系統(tǒng)可編程Mirocomputer外設（閃速，在系統(tǒng)可編程微控制器外圍器件，100萬位閃速存儲器，256K位的EEPROM，16K的位的SRAM）
文件頁數(shù)： 28/130頁
文件大?。?/td> 650K
代理商： PSD813F4
PSD813F Famly
Prelimnary
24
Figure 4. Software Data Protection Dsable Flow Chart
9.1.1.6.4 Write OTP Row
Writing to the OTP row (64 bytes) can only be done once per byte, and is enabled by an
instruction. This instruction is composed of three specific Write operations of data bytes at
three specific memory locations followed by the data to be stored in the OTP row (refer to
Table 9). During the write operations, address bit A6 must be zero, while address bits A5-A0
define the OTP Row byte to be written while any EEPROM Sector Select signal (EESi) is
active. Writing the OTP Row is allowed only when SDP mode is not enabled.
9.1.1.7 Programmng Flash Memory
Flash memory must be erased prior to being programmed. The MCU may erase Flash
memory all at once or by-sector, but not byte-by-byte. A byte of Flash memory erases to all
logic ones (FF hex), and its bits are programmed to logic zeros. Although erasing Flash
memory occurs on a sector basis, programming Flash memory occurs on a byte basis.
The PSD813F main Flash and optional boot Flash require the MCU to send an instruction
to program a byte or perform an erase function (see Table 9). This differs from EEPROM,
which can be programmed with simple MCU bus write operations (unless EEPROM SDP
mode is enabled).
Once the MCU issues a Flash memory program or erase instruction, it must check for the
status of completion. The embedded algorithms that are invoked inside the PSD813F
support several means to provide status to the MCU. Status may be checked using any of
three methods: Data Polling, Data Toggle, or the Ready/Busy output pin.
WRITE AAh to
Address 555h
WRITE 55h to
Address AAAh
WRITE 80h to
Address 555h
WRITE AAh to
Address 555h
WRITE 55h to
Address AAAh
WRITE 20h to
Address 555h
Page Write
Instruction
Unprotected State
after
tWC (Write Cycle time)
The
PSD813F
Functional
Blocks
(cont.)
相關PDF資料
PDF描述
PSD813F Flash In-System-Programmable Microcontroller Peripherals(閃速，在系統(tǒng)可編程微控制器外圍器件，1M位閃速存儲器，256K位EEPROM，16K位SRAM)
PSD813FH(中文) Field Programmble Microcontroller Peripherals With Flash Memory(帶閃存的現(xiàn)場可編程微控制器)
PSD813FN(中文) Field Programmble Microcontroller Peripherals(帶閃存的現(xiàn)場可編程微控制器)
PSD813FN Field Programmble Microcontroller Peripherals(帶閃存的現(xiàn)場可編程微控制器)
PSD813FH Field Programmble Microcontroller Peripherals With Flash Memory(帶閃存的現(xiàn)場可編程微控制器)
相關代理商/技術參數(shù)
參數(shù)描述
PSD813F4-15J 制造商:WSI 功能描述:
PSD813F4-15JI 制造商:WSI 功能描述:
PSD813F4A-90J 功能描述:SPLD - 簡單可編程邏輯器件 U 511-PSD813F2A-90J RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池數(shù)量:10 最大工作頻率:66 MHz 延遲時間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風格:Through Hole 封裝 / 箱體:DIP-24
PSD813F4A-90M 功能描述:SPLD - 簡單可編程邏輯器件 U 511-PSD813F2A-90M RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池數(shù)量:10 最大工作頻率:66 MHz 延遲時間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風格:Through Hole 封裝 / 箱體:DIP-24
PSD813F4VA-15J 功能描述:SPLD - 簡單可編程邏輯器件 U 511-PSD813F2VA-15J RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池數(shù)量:10 最大工作頻率:66 MHz 延遲時間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風格:Through Hole 封裝 / 箱體:DIP-24
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