夏普SHARP進(jìn)口光耦PC817D

PC817D

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*1 Pulse width<=100ms, Duty ratio : 0.001
*3 For 10 seconds
Parameter Symbol Rating Unit
Input
Forward current IF 50 mA
*1Peak forward current IFM 1 A
Reverse voltage VR 6 V
Power dissipation P 70 mW
Output
Collector-emitter voltage VCEO 35 V
Emitter-collector voltage VECO 6 V
Collector current IC 50 mA
Collector power dissipation PC 150 mW
Total power dissipation P tot 200 mW
*2Isolation voltage Viso
Operating temperature T opr - 30 to + 100 °C
Storage temperature T stg - 55 to + 125 °C
*3Soldering temperature T sol 260 °C
*4 Classification table of current transfer ratio is shown below.
PC817 Series
n Absolute Maximum Ratings
n Electro-optical Characteristics
Model No. CTR (%)
PC817A
PC817B
PC817C
PC817D
Rank mark
A
B
C
D
A or B
B or C
C or D
A, B or C
B, C or D
A, B, C or D
80 to 160
130 to 260
200 to 400
300 to 600
80 to 260
130 to 400
200 to 600
80 to 400
130 to 600
80 to 600
A, B, C, D or No mark 50 to 600
0
- 25
30
0 25 50 75 100 125
40
50
60
20
10
Fig. 1 Forward Current vs.
Ambient Temperature
Ambient temperature Ta (°C)
( Ta= 25°C)
( Ta= 25°C)
Forward current I F (mA)
5 000
*2 40 to 60% RH, AC for 1 minute
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Input
Forward voltage VF IF = 20mA - 1.2 1.4 V
Peak forward voltage V FM IFM = 0.5A - - 3.0 V
Reverse current IR VR= 4V - - 10 mA
Terminal capacitance Ct V= 0, f = 1kHz - 30 250 pF
Output Collector dark current ICEO VCE = 20V - - 10 - 7 A
Transfer
characteristics
*4Current transfer ratio CTR IF = 5mA, V CE = 5V 50 - 600 %
Collector-emitter saturation voltage VCE( sat ) IF = 20mA, I C = 1mA - 0.1 0.2 V
Isolation resistance RISO DC500V, 40 to 60% RH 5 x 1010 1011 - W
Floating capacitance Cf V= 0, f = 1MHz - 0.6 1.0 pF
Cut-off frequency fc VCE = 5V, I C = 2mA, R L = 100W, - 3dB - 80 - kHz
Response time
Rise time t r VCE = 2V, I C = 2mA, R L = 100W
- 4 18 m s
Fall time tf - 3 18 m s
Vrms
PC8h7AB
PC8h7BC
PC8h7CD
PC8h7AC
PC8h7BD
PC8h7AD
PC8h7
h : 1 or 2 or 3 or 4