
PPC405EP – PowerPC 405EP Embedded Processor
Revision 1.07 – September 10, 2007
Data Sheet
AMCC
39
Table 11. DC Electrical Characteristics
Parameter
Symbol
Minimum
Typical
Maximum
Unit
Active Operating Current (V
DD
)–266MHz
I
DD
300
610
mA
Active Operating Current (V
DD
)–333MHz
I
DD
325
690
mA
Active Operating Current (OV
DD
)
I
ODD
45
200
mA
PLL V
DD
Input current
I
PLL
16
23
mA
Active Operating Power–266MHz
P
DD
0.72
1.92
W
Active Operating Power–333MHz
P
DD
0.76
2.07
W
Note:
1. The maximum current and power values listed above are not guaranteed to be the highest obtainable. These values are
dependent on many factors including the type of applications running, clock rates, use of internal functional capabilities, external
interface usage, case temperature, and the power supply voltages. Your specific application can produce significantly different
results. V
DD
(logic) current and power are primarily dependent on the applications running and the use of internal chip functions
(DMA, PCI, Ethernet, and so on). OV
DD
(I/O) current and power are primarily dependent on the capacitive loading, frequency, and
utilization of the external buses. The following information provides details about the conditions under which the values in the table
above could be obtained:
a. In general, there would be four PCI devices, an external bus master on the peripheral bus, and external wrap-back on the
Ethernet port. For I
ODD
measurements, PLB = 133.3MHz, OPB = PerClk = 66.6MHz, and PCI = SysClk = 33.3MHz.
b. Typical current and power are characterized at V
DD
= +1.8V, OV
DD
= +3.3V, and T
C
= +36
°
C while running various
applications under the Linux operating system.
c. Maximum current and power are characterized at V
DD
= +1.9V, OV
DD
= +3.6V, and T
C
= +85
°
C while running applications
designed to maximize CPU power consumption. An external PCI master heavily loads the PCI bus with transfers targeting
SDRAM while the internal DMA controller further increases SDRAM bus traffic.
2. AV
DD
should be derived from V
DD
using the following circuit:
V
DD
C1
C2
C3
AV
DD
L1
L1 – 2.2
μ
H SMT inductor (equivalent to MuRata
LQH3C2R2M34) or SMT chip ferrite bead (equivalent
to MuRata BLM31A700S)
C1 – 3.3
μ
F SMT tantalum
C2 –
0.1
μ
F SMT monolithic ceramic capacitor with X7R
dielectric or equivalent
C3 – 0.01
μ
F SMT monolithic ceramic capacitor with X7R
dielectric or equivalent
+
AGND
GND