
PIN Photodiodes
PNZ300
(PN300)
, PNZ300F
(PN300F)
Silicon planar type
1
Publication date: April 2004
SHE00030BED
For optical control systems
■
Features
Fast response which is well suited to high speed modulated light
detection
Wide spectral sensitivity
Low dark current and low noise
Good photo current linearity and wide dynamic sensitivity
Narrow directivity (PNZ300)
Wide derectivity (PNZ300F)
■
Absolute Maximum Ratings
T
a
=
25
°
C
50
λ
P
=
900 nm
t
r
: Rise time
t
f
:
Fall time
Sig. in
R
L
V
R
Sig. out
(Input pulse)
(Output pulse)
10%
90%
t
r
t
f
Glass lens
6
±
10
±02
10
±015
φ
4.6
±0.15
2.54
±0.25
φ
5.75 max.
2-
φ
0.45
±0.05
1
4
°
±
°
1
2
Note) The part numbers in the parenthesis show conventional part number.
PAZ300
Unit: mm
1: Anode
2: Cathode
MTGLR102-001 Package
Parameter
Symbol
Rating
Unit
Reverse
voltage
V
R
50
V
Power dissipation
P
D
100
mW
Operating ambient temperature
T
opr
T
stg
25 to
+
85
30 to
+
100
°
C
°
C
Storage temperature
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be disregarded radiation.
4.*1: Source: Tungsten (color temperature 2
856 K)
*2: Switching time measurement circuit
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Dark current
Photocurrent
*1
I
D
V
R
=
10 V
V
R
=
10 V, L
=
1
000 lx
0.1
10
nA
PNZ300
I
L
30
55
μ
A
PNZ300F
5
7
Peak emission wavelength
Rise time
*2
Fall time
*2
λ
p
V
R
=
10 V
V
R
=
20 V, R
L
=
50
800
nm
t
r
t
f
1
ns
1
ns
Terminal capacitance
C
t
θ
V
R
=
10 V, f
=
1 MHz
7
pF
Half-power angle
PNZ300
The angle from which photocurrent
10
°
PNZ300F
becomes 50%
40
■
Electrical-Optical Characteristics
T
a
=
25
°
C
±
3
°
C
φ
4.6
±0.15
Glass window
2.45
±0.25
10
±02
10
±015
φ
5.75 max.
MTGFR102-001 Package
2-
φ
0.45
±0.05
4
±
1
4
°
±
°
1
2
PAZ300F
Unit: mm
1: Anode
2: Cathode