參數(shù)資料
型號: PN300
廠商: PANASONIC CORP
元件分類: 光敏二極管
英文描述: Silicon PIN Photodiodes
中文描述: PIN PHOTO DIODE
封裝: ROHS COMPLIANT, MTGLR102-001, 2 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 103K
代理商: PN300
PIN Photodiodes
PNZ300
(PN300)
, PNZ300F
(PN300F)
Silicon planar type
1
Publication date: April 2004
SHE00030BED
For optical control systems
Features
Fast response which is well suited to high speed modulated light
detection
Wide spectral sensitivity
Low dark current and low noise
Good photo current linearity and wide dynamic sensitivity
Narrow directivity (PNZ300)
Wide derectivity (PNZ300F)
Absolute Maximum Ratings
T
a
=
25
°
C
50
λ
P
=
900 nm
t
r
: Rise time
t
f
:
Fall time
Sig. in
R
L
V
R
Sig. out
(Input pulse)
(Output pulse)
10%
90%
t
r
t
f
Glass lens
6
±
10
±02
10
±015
φ
4.6
±0.15
2.54
±0.25
φ
5.75 max.
2-
φ
0.45
±0.05
1
4
°
±
°
1
2
Note) The part numbers in the parenthesis show conventional part number.
PAZ300
Unit: mm
1: Anode
2: Cathode
MTGLR102-001 Package
Parameter
Symbol
Rating
Unit
Reverse
voltage
V
R
50
V
Power dissipation
P
D
100
mW
Operating ambient temperature
T
opr
T
stg
25 to
+
85
30 to
+
100
°
C
°
C
Storage temperature
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be disregarded radiation.
4.*1: Source: Tungsten (color temperature 2
856 K)
*2: Switching time measurement circuit
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Dark current
Photocurrent
*1
I
D
V
R
=
10 V
V
R
=
10 V, L
=
1
000 lx
0.1
10
nA
PNZ300
I
L
30
55
μ
A
PNZ300F
5
7
Peak emission wavelength
Rise time
*2
Fall time
*2
λ
p
V
R
=
10 V
V
R
=
20 V, R
L
=
50
800
nm
t
r
t
f
1
ns
1
ns
Terminal capacitance
C
t
θ
V
R
=
10 V, f
=
1 MHz
7
pF
Half-power angle
PNZ300
The angle from which photocurrent
10
°
PNZ300F
becomes 50%
40
Electrical-Optical Characteristics
T
a
=
25
°
C
±
3
°
C
φ
4.6
±0.15
Glass window
2.45
±0.25
10
±02
10
±015
φ
5.75 max.
MTGFR102-001 Package
2-
φ
0.45
±0.05
4
±
1
4
°
±
°
1
2
PAZ300F
Unit: mm
1: Anode
2: Cathode
相關(guān)PDF資料
PDF描述
PN300F Silicon PIN Photodiodes
PNZ102F Silicon NPN Phototransistors
PNA1401LF Silicon NPN Phototransistors
PNZ102 Silicon planar type
PNZ106 Silicon NPN Phototransistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PN300001 功能描述:仿真器/模擬器 Emulation Cable RoHS:否 制造商:Blackhawk 產(chǎn)品:System Trace Emulators 工具用于評估:C6000, C5000, C2000, OMAP, DAVINCI, SITARA, TMS470, TMS570, ARM 7/9, ARM Cortex A8/R4/M3 用于:XDS560v2
PN3004PA005 制造商:Hubbell Wiring Device-Kellems 功能描述:LINKOSITY 30A MALE R/A CABLE 5'
PN3004PA010 制造商:Hubbell Wiring Device-Kellems 功能描述:LINKOSITY 30A MALE R/A CABLE 10'
PN3004PA015 制造商:Hubbell Wiring Device-Kellems 功能描述:LINKOSITY 30A MALE R/A CABLE 15'
PN3007 制造商:IFM ELECTRONICS 功能描述:0 TO 1 BAR PRESS SWITCH