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參數資料
| 型號： | PNZ106 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 光敏三極管 |
| 英文描述： | Silicon NPN Phototransistor |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 340K |
| 代理商： | PNZ106 |
1
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
CEO
V
CBO
V
ECO
V
EBO
I
C
P
C
T
opr
T
stg
Ratings
30
40
5
5
20
100
–25 to +85
–30 to +100
Unit
V
V
V
V
mA
mW
C
C
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Phototransistors
PNZ106
(PN106)
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Fast response : t
r
= 3.5
μ
s (typ.)
Narrow directional sensitivity for effective use of light input
Signal mixing capability using base pin
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
CEO
I
CE(L)
λ
P
θ
t
r*2
t
f*2
V
CE(sat)
Conditions
min
typ
1
0.6
800
10
3.5
5.0
0.2
max
100
Unit
nA
mA
nm
deg.
μ
s
μ
s
V
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Rise time
Fall time
Collector saturation voltage
V
CE
= 10V
V
CE
= 10V, L = 100 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
0.3
V
CC
= 10V, I
CE(L)
= 1mA, R
L
= 100
I
CE(L)
= 1 mA, L = 1000 lx
*1
0.4
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
V
CC
Sig.OUT
Sig.IN
(Input pulse)
(Output pulse)
10%
90%
t
d
t
r
t
f
Glass lens
6
±
0
1: Emitter
2: Base
2: Collector
Unit : mm
10
±
02
10
±
015
4.6
±
0.15
2.54
±
0.25
5.75 max.
3-0.45
±
0.05
1
4
±
3
1
2
3
Note) The part number in the parenthesis shows conventional part number.
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