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參數(shù)資料
| 型號： | PNZ102 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 光敏三極管 |
| 英文描述： | Silicon planar type |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | MTGLR103-001, TO-18, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 82K |
| 代理商： | PNZ102 |
Phototransistors
PNZ102
(PN102)
Silicon planar type
1
Publication date: April 2004
SHE00005BED
For optical control systems
■
Features
High sensitivity
Wide spectral sensitivity characteristics, suited for detecting GaAs
LEDs
Low dark current: I
CEO
=
5 nA (typ.)
Fast response: t
r
, t
f
=
3
μ
s (typ.)
Base pin for easy circuit design
TO-18 standard type package
■
Absolute Maximum Ratings
T
a
=
25
°
C
(Input pulse)
(Output pulse)
50
R
L
t
r
: Rise time
t
f
:
Fall time
V
CC
Sig. out
10%
90%
Sig. in
t
r
t
f
Glass lens
6
±
0
10
±
02
10
±
015
φ
4.6
±
0.15
2.54
±
0.25
φ
5.75 max.
3-
φ
0.45
±
0.05
1
4
°
±
3
°
1
2
3
Note) The part number in the parenthesis shows conventional part number.
Unit: mm
1: Emitter
2: Base
3: Collector
MTGLR103-001 Package
Parameter
Symbol
Rating
Unit
Collector-emitter voltage (Base open)
V
CEO
30
V
Collector-base voltage (Emitter open)
V
CBO
40
V
Emitter-collector voltage (Base open)
V
ECO
V
EBO
5
V
Emitter-base voltage (Collector open)
5
V
Collector current
I
C
50
mA
Collector power dissipation
*
P
C
T
opr
T
stg
150
mW
Operating ambient temperature
25 to
+
85
30 to
+
100
°
C
°
C
Storage temperature
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be disregarded radiation.
4.*1: Source: Tungsten (color temperature 2
856 K)
*2: Switching time measurement circuit
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Photocurrent
*1
I
CE(L)
V
CE
=
10 V, L
=
100 lx
V
CE
=
10 V
V
CE
=
10 V
The angle from which photocurrent
becomes 50%
V
CC
=
10 V, I
CE(L)
=
5 mA, R
L
=
100
1.5
3.5
mA
Dark current
I
CEO
λ
p
θ
5
300
nA
Peak emission wavelength
800
nm
°
Half-power angle
10
Rise time
*2
Fall time
*2
Collector-emitter saturation voltage
*1
t
r
3
μ
s
μ
s
t
f
3
V
CE(sat)
I
CE(L)
=
1 mA, L
=
500 lx
0.2
0.4
V
■
Electrical-Optical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) *: The rate of electric power reduction is 1.5 mW/°C above T
a
= 25°C.
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