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參數(shù)資料
| 型號： | PNA4S11M |
| 廠商： | PANASONIC CORP |
| 元件分類： | 光電元器件 |
| 英文描述： | Bipolar Integrated Circuit with Photodetection Function |
| 中文描述： | LOGIC OUTPUT PHOTO DETECTOR |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 48K |
| 代理商： | PNA4S11M |
3
Photo IC
PNA4S11M, PNA4S12M, PNA4S13M, PNA4S14M
0
10
20
30
40
50
60
70
80
90
Directivity characteristics
Spectral sensitivity characteristics
100
80
60
40
20
Wavelength
λ
(nm)
R
700
800
900
1000
1100
1200
0
600
B.P.F
frequency characteristics
(PNA4S12M)
*
100
80
60
40
20
Carrier frequency (kHz)
*
The peaks for PNA4S11M, PNA4S13M,
and PNA4S14M are all f
0
.
R
35
37
39
41
43
033
V
= 5V
Transmitter : Standard LED
Transmission unit used
L max
— Ta
120
80
40
100
60
20
Ambient temperature Ta (C )
R
0
20
60
80
40
100
0
– 20
20
90
100
80
70
60
50
40
30
R
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PNA4S12M | Bipolar Integrated Circuit with Photodetection Function |
| PNA4S13M | Bipolar Integrated Circuit with Photodetection Function |
| PNA4S14M | Bipolar Integrated Circuit with Photodetection Function |
| PNZ0300 | Silicon PIN Photodiodes |
| PNZ300F | Silicon PIN Photodiodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PNA4S12M | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Bipolar Integrated Circuit with Photodetection Function |
| PNA4S13M | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Bipolar Integrated Circuit with Photodetection Function |
| PNA4S14M | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Bipolar Integrated Circuit with Photodetection Function |
| PNA4S87F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Opto-Electronic Device - Photo Detectors - Photo ICs |
| PNA4U15F | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Photodiode with amplifier functions |
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