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參數(shù)資料
| 型號： | PNA4S11M |
| 廠商： | PANASONIC CORP |
| 元件分類： | 光電元器件 |
| 英文描述： | Bipolar Integrated Circuit with Photodetection Function |
| 中文描述： | LOGIC OUTPUT PHOTO DETECTOR |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 48K |
| 代理商： | PNA4S11M |
1
PNA4S11M
Series
(PNA4S11M/4S12M/4S13M/4S14M)
Bipolar Integrated Circuit with Photodetection Function
For infrared remote control systems
Photo IC
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
CC
P
D
T
opr
T
stg
Ratings
–
0.5 to +7
200
–20 to +60
–
30 to +70
Unit
V
mW
C
C
Power supply voltage
Power dissipation
Operating ambient temperature
Storage temperature
1: V
O
2: V
3: GND
4: GND
Unit : mm
5.2
(2.6)
3.47
R1.7
1
2
3
4
7
(
400
μ
s
400
μ
s
Fig.2
Fig.1
Main Characteristics
(Ta = 25C V
CC
= 5V)
Parameter
Operating supply voltage
Current consumption
Maximum reception distance
Low-level output voltage
High-level output voltage
Low-level pulse width
High-level pulse width
PNA4S11M
PNA4S12M
PNA4S13M
PNA4S14M
Symbol
V
CC
I
CC
L
max*1
V
OL*2
V
OH
T
WL*1
T
WH*1
Conditions
min
4.7
1.8
7.0
typ
5.0
2.4
max
5.3
3.0
Unit
V
mA
m
V
V
μ
s
μ
s
No signal condition
L
≤
7.0m, 10L=400
μ
A
No signal condition
L=7.0m, 16Pulse
L=7.0m, 16Pulse
0.35
5.0
400
400
36.7
38.0
40.0
56.9
0.5
V
CC
600
600
4.8
200
200
Carrier frequency
f
0
kHz
*1
Fig.1 burst wave, L=L
max
, 16 pulses
Carrier wave : f
o
Features
Surface-mounting type for reflow soldering
Space saved by miniaturization
Ready for automatic mounting
*2
Fig.2 continuous wave, L
≤
L
max
Carrier wave : f
o
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| PNA4S14M | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Bipolar Integrated Circuit with Photodetection Function |
| PNA4S87F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Opto-Electronic Device - Photo Detectors - Photo ICs |
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