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參數(shù)資料
| 型號： | PN4355 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP General Purpose Amplifier(PNP通用放大器) |
| 中文描述： | 800 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 41K |
| 代理商： | PN4355 |
P
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
PNP General Purpose Amplifier
(continued)
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Sustaining
Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector-Cutoff Current
I
EBO
Emitter-Cutoff Current
SMALL SIGNAL CHARACTERISTICS
C
obo
Output Capacitance
C
ibo
Input Capacitance
h
fe
Small-Signal Current Gain
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 1.0 mA, I
B
= 0
60
V
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 50 V, I
E
= 0
V
EB
= 5.0 V, V
CE
= 0
V
EB
= 4.0 V, I
C
= 0
60
5.0
V
V
nA
μ
A
nA
50
10
100
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
EB
= 0.5 V, I
C
= 0, f = 1.0 MHz
I
C
= 50 mA, V
CE
= 10 V,
f = 100 MHz
I
C
= 100
μ
A, V
CE
= 10 V,
R
S
= 1.0 k
, f = 1.0 kHz,
BW = 1.0 Hz
30
110
5.0
pF
pF
1.0
NF
Noise Figure
1.0
3.0
dB
SWITCHING CHARACTERISTICS
t
on
Turn-On Time
t
off
Turn-Off Time
I
C
= 500 mA, V
CC
= 500 mA
I
B1
= I
B2
= 50 mA
100
400
ns
ns
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
1.0%
I
C
= 100
μ
A, V
CE
= 10 V
I
C
= 1.0mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 100 mA, V
CE
= 10 V
I
C
= 500 mA, V
CE
= 10 V
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1.0 A, I
B
= 100 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1.0 A, I
B
= 100 mA
I
C
= 500 mA, V
CE
= 0.5 V
I
C
= 1.0 A, V
CE
= 1.0 V
60
75
100
75
75
400
V
CE(
sat
)
Collector-Emitter Saturation Voltage
0.15
0.50
1.0
0.9
1.1
1.2
1.1
1.2
V
V
V
V
V
V
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
V
BE(
on
)
Base-Emitter On Voltage
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PN4355_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP General Purpose Amplifier |
| PN4355_D26Z | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PN4355_D27Z | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PN4355_D74Z | 功能描述:兩極晶體管 - BJT PNP Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PN4355_Q | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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