參數(shù)資料
型號(hào): PMEG2015EV
英文描述: Low VF MEGA Schottky barrier diode
中文描述: 低VF MEGA肖特基勢(shì)壘二極管
文件頁(yè)數(shù): 3/8頁(yè)
文件大小: 52K
代理商: PMEG2015EV
2003 Jun 03
3
Philips Semiconductors
Product specification
Low V
F
MEGA Schottky barrier diode
PMEG2015EV
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Notes
1.
2.
Only valid if pins 1, 2 and 5, 6 are soldered on 1 cm
2
copper solder land.
Pulse test: t
p
= 300
μ
s;
δ
= 0.02.
THERMAL CHARACTERISTICS
Notes
1.
2.
3.
Refer to SOT666 standard mounting conditions.
Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for cathode 1 cm
2
.
Soldering point of cathode tabs.
Soldering
Reflow soldering is the only recommended soldering method.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
F
continuous forward voltage
see Fig.2; note 1
I
F
= 10 mA
I
F
= 100 mA
I
F
= 1000 mA
I
F
= 1500 mA
see Fig.3; note 2
V
R
= 5 V
V
R
= 8 V
V
R
= 15 V
V
R
= 5 V; f = 1 MHz; see Fig.4 19
240
300
480
530
270
350
550
660
mV
mV
mV
mV
I
R
continuous reverse current
5
7
10
10
20
50
25
μ
A
μ
A
μ
A
pF
C
d
diode capacitance
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
note 2
note 3
405
215
80
K/W
K/W
K/W
R
th j-s
thermal resistance from junction to solder point
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