- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365369 > PM200DHA060 TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 200A I(C) PDF資料下載
參數(shù)資料
| 型號： | PM200DHA060 |
| 英文描述： | TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 200A I(C) |
| 中文描述： | 晶體管| IGBT功率模塊|半橋| 600V的五（巴西）國際消費電子展| 200安培我（丙） |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 127K |
| 代理商： | PM200DHA060 |
MITSUBISHI <INTELLIGENT POWER MODULES>
PM200RSE060
FLAT-BASE TYPE
INSULATED PACKAGE
Sep. 2001
NOTES FOR STABLE AND SAFE OPERATION ;
Design the PCB pattern to minimize wiring length between opto-coupler and IPM
’
s input terminal, and also to minimize the
stray capacity between the input and output wirings of opto-coupler.
Quick opto-couplers: TPLH, TPLH
≤
0.8
μ
s. Use High CMR type. The line between opto-coupler and intelligent module
should be shortened as much as possible to minimize the floating capacitance.
Slow switching opto-coupler: recommend to use at CTR = 100 ~ 200%, Input current = 8 ~ 10mA, to work in active.
Use 4 isolated control power supplies (V
D
). Also, care should be taken to minimize the instantaneous voltage charge of the
power supply.
Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N
terminal.
Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line
and improve noise immunity of the system.
OUT
Si
GND
GND
In
Vcc
U
V
W
B
N
P
M
IF
+
–
: Interface which is the same as the U-phase
OUT
Si
GND
GND
In
Vcc
OUT
Si
GND
GND
In
Vcc
OUT
Si
GND
GND
In
Fo
Vcc
OUT
Si
GND
GND
In
Fo
TEMP
Vcc
OUT
Si
GND
GND
In
Fo
Vcc
VWP1
WP
VWPC
Th
UN
VN
VN1
WN
VNC
Rfo
Fo
VVP1
VP
VVPC
≥
0.1
μ
4.7k
1k
≥
0.1
μ
≥
0.1
μ
20k
20k
20k
≥
10
μ
≥
10
μ
≥
10
μ
20k
≥
10
μ
≥
0.1
μ
VUP1
UP
VUPC
Br
IF
IF
IF
5V
OUT
Si
GND
GND
In
Fo
Vcc
V
D
V
D
V
D
V
D
Fig. 8 Application Example Circuit
相關PDF資料 |
PDF描述 |
|---|---|
| PM200DHA120 | TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 200A I(C) |
| PM200RLA060 | FLAT-BASE TYPE INSULATED PACKAGE |
| PM200CLA060 | FLAT-BASE TYPE INSULATED PACKAGE |
| PM200CSE060 | FLAT-BASE TYPE INSULATED INSULATED PACKAGE |
| PM200RSA060 | USING INTELLIGENT POWER MODULES |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PM200DHA120 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 200A I(C) |
| PM200DSA060 | 功能描述:MOD IPM DUAL 600V 200A RoHS:否 類別:半導體模塊 >> 功率驅(qū)動器 系列:Intellimod™ 標準包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PM200DSA060_00 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE |
| PM200DSA120 | 功能描述:MOD IPM DUAL 1200V 200A RoHS:否 類別:半導體模塊 >> 功率驅(qū)動器 系列:Intellimod™ 標準包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PM200DSA120_00 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE |
發(fā)布緊急采購，3分鐘左右您將得到回復。