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參數(shù)資料
| 型號(hào)： | PM200CSE060 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | FLAT-BASE TYPE INSULATED INSULATED PACKAGE |
| 中文描述： | 平性基地型絕緣絕緣包裝 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 127K |
| 代理商： | PM200CSE060 |
MIMITSUBISHI <INTELLIGENT POWER MODULES>
PM200RSE060
ININSULATED PACKAGE
Sep. 2001
FLFLAT-BASE TYPE
PM200RSE060
FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1
μ
m fine rule process.
For example, typical V
CE
(sat)=1.7V
b) Using new Diode which is designed to get soft reverse
recovery characteristics.
3
φ
200A, 600V Current-sense IGBT for 15kHz switching
75A, 600V Current-sense regenerative brake IGBT
Monolithic gate drive & protection logic
Detection, protection & status indication circuits for over-
current, short-circuit, over-temperature & under-voltage
Acoustic noise-less 22kW class inverter application
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
1
135
24.1
5
1
1
MOUNTING
39.7
3.22
10.16
10.16
10.16
2-2.54 2-2.54
3.22
2-2.54
62-2.54
74.4
6-2.54
1
2
2
3
±
1
1 2 3
4 5 6
7 8 9
10
11
12
13
14
15
16
9
0
1
1
120.5
LABEL
4-
φ
5.5
φ
2.54
2-
φ
2.54
16- 0.64
±
0.5
51.5
A
26
10.5
1
4
26
2
3
3
4-R6
6-M5 NUTS
0.5
±
0.3
2
+
U
P
N
B
V
W
0.64
A : DETAIL
1. V
UPC
2. U
P
3. V
UP1
4. V
VPC
5. V
P
6. V
VP1
7. V
WPC
8. W
P
9. V
WP1
10. V
NC
11. V
N1
12. B
r
13. U
N
14. V
N
15. W
N
16. F
O
Terminal code
Screwing depth
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PM200RSA060 | USING INTELLIGENT POWER MODULES |
| PM200CVA060 | FLAT-BASE TYPE INSULATED PACKAGE |
| PM200CSA060 | FLAT-BASE TYPE INSULATED PACKAGE |
| PM200DSA060 | FLAT-BASE TYPE INSULATED PACKAGE |
| PM200DSA120 | FLAT-BASE TYPE INSULATED PACKAGE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PM200CSE060_05 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM200CVA060 | 功能描述:MOD IPM 6PAC 600V 200A RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:Intellimod™ 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類(lèi)型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PM200CVA060_05 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE |
| PM200DHA060 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 200A I(C) |
| PM200DHA120 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 200A I(C) |
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