參數(shù)資料
型號： PM200DSA060
廠商： Mitsubishi Electric Corporation
英文描述： FLAT-BASE TYPE INSULATED PACKAGE
中文描述： 平性基地型絕緣包裝
文件頁數(shù)： 1/6頁
文件大?。?/td> 127K
代理商： PM200DSA060
MIMITSUBISHI <INTELLIGENT POWER MODULES>
PM200RSE060
ININSULATED PACKAGE
Sep. 2001
FLFLAT-BASE TYPE
PM200RSE060
FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1
μ
m fine rule process.
For example, typical V
CE
(sat)=1.7V
b) Using new Diode which is designed to get soft reverse
recovery characteristics.
3
φ
200A, 600V Current-sense IGBT for 15kHz switching
75A, 600V Current-sense regenerative brake IGBT
Monolithic gate drive & protection logic
Detection, protection & status indication circuits for over-
current, short-circuit, over-temperature & under-voltage
Acoustic noise-less 22kW class inverter application
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
1
135
24.1
5
1
1
MOUNTING
39.7
3.22
10.16
10.16
10.16
2-2.54 2-2.54
3.22
2-2.54
62-2.54
74.4
6-2.54
1
2
2
3
±
1
1 2 3
4 5 6
7 8 9
10
11
12
13
14
15
16
9
0
1
1
120.5
LABEL
4-
φ
5.5
φ
2.54
2-
φ
2.54
16- 0.64
±
0.5
51.5
A
26
10.5
1
4
26
2
3
3
4-R6
6-M5 NUTS
0.5
±
0.3
2
+
U
P
N
B
V
W
0.64
A : DETAIL
1. V
UPC
2. U
P
3. V
UP1
4. V
VPC
5. V
P
6. V
VP1
7. V
WPC
8. W
P
9. V
WP1
10. V
NC
11. V
N1
12. B
r
13. U
N
14. V
N
15. W
N
16. F
O
Terminal code
Screwing depth
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PM200DSA060_00 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
PM200DSA120 功能描述:MOD IPM DUAL 1200V 200A RoHS:否 類別:半導(dǎo)體模塊 >> 功率驅(qū)動器 系列:Intellimod™ 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊
PM200DSA120_00 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
PM200DV1A120 制造商:Powerex Power Semiconductors 功能描述:MOD IPM V1 DUAL 200A 1200V 制造商:Powerex Power Semiconductors 功能描述:IGBT Module 制造商:Powerex Power Semiconductors 功能描述:IGBT Module; DC Collector Current:200A; Collector Emitter Voltage Vces:1.85V; Collector Emitter Voltage V(br)ceo:1.2kV; Module Configuration:Dual; Package / Case:120 x 70mm Module
PM200DV1A120 制造商:Powerex Power Semiconductors 功能描述:IGBT Module
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