參數資料
型號: PM200CLA120
廠商: Mitsubishi Electric Corporation
英文描述: INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
中文描述: 智能功率模塊扁平性基地型絕緣包裝
文件頁數: 3/8頁
文件大?。?/td> 146K
代理商: PM200CLA120
MITSUBISHI <INTELLIGENT POWER MODULES>
PM200CLA120
FLAT-BASE TYPE
INSULATED PACKAGE
Jul. 2005
Parameter
Symbol
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature
Isolation Voltage
Condition
V
CC(surge)
T
stg
V
iso
Ratings
V
CC(PROT)
800
1000
40 ~ +125
2500
Unit
V
°
C
V
rms
V
V
D
= 13.5 ~ 16.5V, Inverter Part,
T
j
= +125
°
C Start
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
TOTAL SYSTEM
0.12
0.20
0.014
°
C/W
R
th(j-c)Q
R
th(j-c)F
R
th(c-f)
Inverter IGBT (per 1 element)
Inverter FWDi (per 1 element)
Case to fin, (per 1 module)
Thermal grease applied
(Note-1)
(Note-1)
(Note-1)
Symbol
Condition
Unit
Min.
Junction to case Thermal
Resistances
THERMAL RESISTANCES
Contact Thermal Resistance
Parameter
Limits
Typ.
Max.
(Note-1) Tc measurement point is just under the chip.
If you use this value, R
th(f-a)
should be measured just under the chips.
UP
IGBT
26.5
85.5
VP
WP
UN
VN
WN
FWDi
23.6
70.5
IGBT
76.5
85.5
FWDi
73.6
70.5
IGBT
126.5
85.5
FWDi
123.6
70.5
IGBT
23.4
24.5
FWDi
26.4
39.5
IGBT
73.4
24.5
FWDi
76.4
39.5
IGBT
123.4
24.5
FWDi
126.4
39.5
arm
axis
X
Y
2.3
2.4
3.9
2.5
0.8
1.0
3.5
1.2
1
10
Min.
0.5
Typ.
1.8
1.9
2.8
1.0
0.5
0.4
2.3
0.7
Max.
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Collector-Emitter
Cutoff Current
I
C
= 200A, V
D
= 15V, V
CIN
= 15V
(Fig. 2)
T
j
= 25
°
C
T
j
= 125
°
C
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C, unless otherwise noted)
INVERTER PART
Parameter
Symbol
Condition
V
CE(sat)
I
CES
V
EC
t
on
t
rr
t
c(on)
t
off
t
c(off)
Limits
T
j
= 25
°
C
T
j
= 125
°
C
Switching Time
V
D
= 15V, V
CIN
= 0V
15V
V
CC
= 600V, I
C
= 200A
T
j
= 125
°
C
Inductive Load
(Fig. 3, 4)
V
CE
= V
CES
, V
CIN
= 15V
(Fig. 5)
V
D
= 15V, I
C
= 200A
V
CIN
= 0V
(Fig. 1)
V
mA
V
μ
s
Unit
7
1
6
Name
plate
side
Bottom
view
13
Y
X
(Unit : mm)
Table 1: T
C
(under the chip) measurement point is below.
相關PDF資料
PDF描述
PM200RSE060 General purpose inverter, servo drives and other motor controls
PM200CSAJ060 Analog IC
PM200DHA060 TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 200A I(C)
PM200DHA120 TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 200A I(C)
PM200RLA060 FLAT-BASE TYPE INSULATED PACKAGE
相關代理商/技術參數
參數描述
PM200CS1D060 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
PM200CSA060 功能描述:MOD IPM 6PAC 600V 200A RoHS:否 類別:半導體模塊 >> 功率驅動器 系列:Intellimod™ 標準包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊
PM200CSA060_00 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE
PM200CSAJ060 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC
PM200CSD060 功能描述:MOD IPM 6PAC 600V 200A RoHS:是 類別:半導體模塊 >> 功率驅動器 系列:Intellimod™ 標準包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊