參數(shù)資料
型號: PIP3103-T
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | SOT-223
中文描述: 晶體管| MOSFET的| N通道|采用SOT - 223
文件頁數(shù): 7/11頁
文件大小: 59K
代理商: PIP3103-T
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
PIP3103-T
Fig.14. Typical Protection reset voltage.
V
ISR
= f(T
j
); t
lr
= 100
μ
s.
Fig.15. Overvoltage clamping characteristic, 25C.
I
D
= f(V
DS
); conditions: V
IS
= 0 V; t
p
300
μ
s
Fig.16. Test circuit for resistive load switching times.
V
IS
= 5 V
Fig.17. Typical switching waveforms, resistive load .
R
L
= 50
; adjust V
DD
to obtain I
D
= 250 mA; T
j
= 25C
Fig.18. Typical drain source leakage current
I
DSS
= f(T
j
); conditions: V
DS
= 40 V; V
IS
= 0 V.
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-50
50
150
VISR / V
Tj /
C
-25
0
25
75
100
125
VIS
VDS
0
5
10
15
-20
20
40
60
80
100
120
140
160
0
-40
time / us
VIS & VDS / V
56
58
60
62
VDS / V
64
66
68
0
100
200
300
400
ID / mA
TYP.
-50
0
50
100
150
10 uA
1 uA
100 nA
10 nA
IDSS
Tj /
C
VDD
D.U.T.
0V
VIS
D
S
I
TOPFET
P
RL
VDS
measure
June 2001
7
Rev 1.000
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