參數(shù)資料
型號(hào): PIP3106-D
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | TO-252AA
中文描述: 晶體管| MOSFET的| N溝道| 50V五(巴西)直資|到252AA
文件頁(yè)數(shù): 1/11頁(yè)
文件大小: 59K
代理商: PIP3106-D
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
PIP3103-T
DESCRIPTION
QUICK REFERENCE DATA
Monolithic temperature and
overload protected logic level power
MOSFET in
TOPFET2
technology
assembled in a 3 pin surface mount
plastic package.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
Continuous drain source voltage
50
V
I
D
Continuous drain current
0.7
A
APPLICATIONS
P
D
Total power dissipation
1.8
W
General purpose switch for driving
lamps
motors
solenoids
heaters
T
j
Continuous junction temperature
150
C
R
DS(ON)
Drain-source on-state resistance
200
m
FEATURES
FUNCTIONAL BLOCK DIAGRAM
TrenchMOS output stage
Current limiting
Overload protection
Overtemperature protection
Protection latched reset by input
5 V logic compatible input level
Control of output stage and
supply of overload protection
circuits derived from input
Low operating input current
permits direct drive by
micro-controller
ESD protection on all pins
Overvoltage clamping for turn
off of inductive loads
Fig.1. Elements of the TOPFET.
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
input
2
drain
3
source
4
drain (tab)
DRAIN
SOURCE
INPUT
RIG
LOGIC AND
PROTECTION
O / V
CLAMP
POWER
MOSFET
4
1
2
3
P
D
S
I
TOPFET
June 2001
1
Rev 1.000
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PIP3115-B 制造商:NXP Semiconductors 功能描述:MOSFET N INTELLIGENT
PIP3115-B,118 功能描述:MOSFET TAPE13 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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