參數(shù)資料
型號: PIP3103-T
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | SOT-223
中文描述: 晶體管| MOSFET的| N通道|采用SOT - 223
文件頁數(shù): 5/11頁
文件大?。?/td> 59K
代理商: PIP3103-T
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
PIP3103-T
Fig.2. Normalised limiting power dissipation.
P
D
% = 100
P
D
/P
D
(25C) = f(T
mb
)
Fig.3. Continuous drain current.
I
D
= f(T
amb
); condition: V
IS
= 5 V
Fig.4. Typical on-state characteristics, T
j
= 25C.
I
D
= f(V
DS
); parameter V
IS
; t
p
= 300
μ
s
Fig.5. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)
25C = f(T
j
); I
D
= 100 mA; V
IS
= 4.4 V
Fig.6. Typical on-state resistance, T
j
= 25C.
R
DS(ON)
= f(V
IS
); conditions: I
D
= 100 mA, t
p
= 300
μ
s
Fig.7. Typical transfer characteristics, T
= 25C.
I
D
= f(V
IS
); conditions: V
DS
= 10 V, t
p
= 300
μ
s
Normalised Power Derating, PD (%)
0
10
20
30
40
50
60
70
80
90
100
0
25
50
75
100
125
150
Mounting Base temperature, Tmb (C)
0
0.5
1
1.5
2
-50
0
100
150
Normalised RDS(ON) = f(Tj)
a
T50
0
0
0.5
1.0
1.5
2.0
20
40
60
80
100
120
140
ID / A
Tamb / C
CURRENT LIMITING OCCURS
WITHIN SHADED REGION
TYP.
0
1
2
3
4
5
6
7
8
0
50
100
150
200
250
300
350RDS(ON) / mOhm
VIS / V
TYP.
MAX.
0
20
0
0.5
1
1.5
2
ID / A
VDS / V
4
8
12
16
28
32
24
VIS / V =
6
5
7
4
0
1
2
3
4
5
6
7
0
0.5
1
1.5
2
VIS / V
ID / A
June 2001
5
Rev 1.000
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