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| 型號： | PIIPM50P12B004 |
| 英文描述： | Programmable solated intelligent power module. a 50A. 1200V. three-phase inverter for 15kW industrial and servo motors with on-board programmable DSP. current sensing. isolation. gate drivers and power stage. |
| 中文描述： | 可編程solated智能功率模塊。 1 50A條。 1200伏。三相逆變器為15Kw的工業(yè)和伺服電機(jī)與板上可編程DSP。電流感應(yīng)。隔離。柵極驅(qū)動器和功率級。 |
| 文件頁數(shù)： | 7/29頁 |
| 文件大小： | 1151K |
| 代理商： | PIIPM50P12B004 |
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7
PIIPM25P12B008
I27147 01/03
Switching Characteristics: Inverter
For proper operation the device should be used within the recommended conditions.
T
J
= 25°C (unless otherwise specified)
Symbol
Parameter Definition
Min
Typ
Max
Units
Test Conditions
Fig.
Q
g
Total Gate Charge (turn on)
169
254
Q
ge
Gate – Emitter Charge (turn on)
19
29
Q
gc
Gate – Collector Charge (turn on)
82
123
nC
I
C
= 25A
V
CC
= 600V
V
GE
= 15V
23
CT1
E
on
Turn on Switching Loss
1.9
3.6
I
C
= 25A, V
CC
= 600V, T
J
= 25 oC
CT4
E
off
Turn off Switching Loss
1.3
2.0
V
GE
= 15V, R
G
=20
,
L = 200
μ
H
WF1
E
tot
Total Switching Loss
3.2
5.6
mJ
Tail and Diode Rev. Recovery included
WF2
E
on
Turn on Switching Loss
2.7
4.6
E
off
Turn off Switching Loss
2.0
2.3
E
tot
Total Switching Loss
4.7
6.9
mJ
I
C
= 25A, V
CC
= 600V, T
J
= 125 oC
V
GE
= 15V, R
G
=20
,
L = 200
μ
H
Tail and Diode Rev. Recovery included
13,
15
CT4
WF1
WF2
td (on)
Turn on delay time
192
210
14,16
Tr
Rise time
33
49
I
C
= 25A, V
CC
= 600V, T
J
= 125 oC
CT4
td (off)
Turn off delay time
213
227
WF1
Tf
Fall time
210
379
ns
V
GE
= 15V, R
G
=20
,
L = 200
μ
H
WF2
C
ies
Input Capacitance
2200
V
CC
= 30V
C
oes
Output Capacitance
210
V
GE
= 0V
C
res
Reverse Transfer Capacitance
85
PF
f = 1MHz
22
T
J
= 150 oC, I
C
=100A, V
GE
= 15V to 0V
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
V
CC
= 1000V, V
p
= 1200V, R
G
= 5
4
CT2
T
J
= 150 oC, V
GE
= 15V to 0V
CT3
SCSOA
Short Circuit Safe Operating Area
10
μ
s
V
CC
= 1000V, Vp= 1200V, R
G
= 5
WF4
E
REC
Diode reverse recovery energy
1820
2400
μ
J
T
J
= 125 oC
Trr
Diode reverse recovery time
300
ns
I
F
= 25A, V
CC
= 600V,
Irr
Peak reverse recovery current
25
32
A
V
GE
= 15V, R
G
=20
,
L = 200
μ
H
17,18
19,20
21
CT4
WF3
Rth
JC_T
Each IGBT to copper plate thermal resistance
0.65
oC/W
Rth
JC_D
Each Diode to copper plate thermal resistance
1.05
oC/W
Rth
C-H
Module copper plate to heat sink thermal
resistance. Silicon grease applied = 0.1mm
0.03
oC/W
See also fig. 24
24
52
I
C
= 3.5A, V
DC
= 530V, fsw = 8kHz, T
C
= 55 oC
70
I
C
= 5A, V
DC
= 530V, fsw = 8kHz, T
C
= 55 oC
114
I
C
= 5A, V
DC
= 530V, fsw = 16kHz T
C
= 55 oC,
Pdiss
Total Dissipated Power
102
W
I
C
= 10A, V
DC
= 530V, fsw = 4kHz, T
C
= 40oC
PD1
PD2
PD3
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