IULP Ultra Low-Power Wake-Up Current —" />
參數(shù)資料
型號： PIC12F683-E/SN
廠商： Microchip Technology
文件頁數(shù)： 29/176頁
文件大?。?/td> 0K
描述： IC MCU FLASH 2KX14 8SOIC
產(chǎn)品培訓模塊： Asynchronous Stimulus
Digi-Key 應(yīng)用說明： AN0005 PWM Example with Microchip's CCP Module
AN0005 Example Code
標準包裝： 100
系列： PIC® 12F
核心處理器： PIC
芯體尺寸： 8-位
速度： 20MHz
外圍設(shè)備： 欠壓檢測/復位，POR，PWM，WDT
輸入/輸出數(shù)： 5
程序存儲器容量： 3.5KB（2K x 14）
程序存儲器類型： 閃存
EEPROM 大?。?/td> 256 x 8
RAM 容量： 128 x 8
電壓 - 電源 (Vcc/Vdd)： 2 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 4x10b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 125°C
封裝/外殼： 8-SOIC（0.154"，3.90mm 寬）
包裝： 管件
配用： AC162058-ND - HEADER MPLAB ICD2 FOR PIC12F683
I3-DB12F683-ND - BOARD DAUGHTER ICEPIC3
PIC12F683
DS41211D-page 122
2007 Microchip Technology Inc.
D100
IULP
Ultra Low-Power Wake-Up
Current
—
200
—
nA
See Application Note AN879,
“Using the Microchip Ultra
Low-Power Wake-up Module”
(DS00879)
Capacitive Loading Specs on
Output Pins
D101*
COSC2
OSC2 pin
—
15
pF
In XT, HS and LP modes when
external clock is used to drive
OSC1
D101A* CIO
All I/O pins
—
50
pF
Data EEPROM Memory
D120
ED
Byte Endurance
100K
1M
—
E/W
-40°C
≤ TA ≤ +85°C
D120A
ED
Byte Endurance
10K
100K
—
E/W
+85°C
≤ TA ≤ +125°C
D121
VDRW
VDD for Read/Write
VMIN
—
5.5
V
Using EECON1 to read/write
VMIN = Minimum operating
voltage
D122
TDEW
Erase/Write Cycle Time
—
5
6
ms
D123
TRETD
Characteristic Retention
40
—
Year
Provided no other specifications
are violated
D124
TREF
Number of Total Erase/Write
Cycles before Refresh(4)
1M
10M
—
E/W
-40°C
≤ TA ≤ +85°C
Program Flash Memory
D130
EP
Cell Endurance
10K
100K
—
E/W
-40°C
≤ TA ≤ +85°C
D130A
ED
Cell Endurance
1K
10K
—
E/W
+85°C
≤ TA ≤ +125°C
D131
VPR
VDD for Read
VMIN
—5.5
V
VMIN = Minimum operating
voltage
D132
VPEW
VDD for Erase/Write
4.5
—
5.5
V
D133
TPEW
Erase/Write cycle time
—
2
2.5
ms
D134
TRETD
Characteristic Retention
40
—
Year
Provided no other specifications
are violated
15.5
DC Characteristics:
PIC12F683-I (Industrial)
PIC12F683-E (Extended) (Continued)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C
≤ TA ≤ +85°C for industrial
-40°C
≤ TA ≤ +125°C for extended
Param
No.
Sym
Characteristic
Min
Typ
Max
Units
Conditions
*
These parameters are characterized but not tested.
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note
1:
In RC oscillator configuration, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended to use an external
clock in RC mode.
2:
Negative current is defined as current sourced by the pin.
3:
The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels represent
normal operating conditions. Higher leakage current may be measured at different input voltages.
4:
See Section 10.4.1 “Using the Data EEPROM” for additional information.
5:
Including OSC2 in CLKOUT mode.
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參數(shù)描述
PIC12F683-I/MD 功能描述:8位微控制器 -MCU 3.5KB 128 RAM 6I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
PIC12F683-I/MDQTP 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:8-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology
PIC12F683-I/MF 功能描述:8位微控制器 -MCU 3.5KB 128 RAM 6 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
PIC12F683-I/MF 制造商:Microchip Technology Inc 功能描述:8BIT FLASH MCU SMD 12F683 DFN-8
PIC12F683-I/MFQTP 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:8-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology
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