參數資料
型號: PIC12F683-E/SN
廠商: Microchip Technology
文件頁數: 26/176頁
文件大?。?/td> 0K
描述: IC MCU FLASH 2KX14 8SOIC
產品培訓模塊: Asynchronous Stimulus
Digi-Key 應用說明: AN0005 PWM Example with Microchip's CCP Module
AN0005 Example Code
標準包裝: 100
系列: PIC® 12F
核心處理器: PIC
芯體尺寸: 8-位
速度: 20MHz
外圍設備: 欠壓檢測/復位,POR,PWM,WDT
輸入/輸出數: 5
程序存儲器容量: 3.5KB(2K x 14)
程序存儲器類型: 閃存
EEPROM 大小: 256 x 8
RAM 容量: 128 x 8
電壓 - 電源 (Vcc/Vdd): 2 V ~ 5.5 V
數據轉換器: A/D 4x10b
振蕩器型: 內部
工作溫度: -40°C ~ 125°C
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
包裝: 管件
配用: AC162058-ND - HEADER MPLAB ICD2 FOR PIC12F683
I3-DB12F683-ND - BOARD DAUGHTER ICEPIC3
2007 Microchip Technology Inc.
DS41211D-page 119
PIC12F683
15.3
DC Characteristics: PIC12F683-I (Industrial)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C
≤ TA ≤ +85°C for industrial
Param
No.
Device Characteristics
Min
Typ
Max
Units
Conditions
VDD
Note
D020
Power-down Base
Current(IPD)(2)
0.05
1.2
μA
2.0
WDT, BOR, Comparators, VREF and
T1OSC disabled
0.15
1.5
μA3.0
0.35
1.8
μA5.0
150
500
nA
3.0
-40°C
≤ TA ≤ +25°C
D021
1.0
2.2
μA
2.0
WDT Current(1)
—2.0
4.0
μA3.0
—3.0
7.0
μA5.0
D022
42
60
μA
3.0
BOR Current(1)
85
122
μA5.0
D023
32
45
μA
2.0
Comparator Current(1), both
comparators enabled
—60
78
μA3.0
120
160
μA5.0
D024
30
36
μA2.0
CVREF Current(1) (high range)
—45
55
μA3.0
—75
95
μA5.0
D025*
39
47
μA2.0
CVREF Current(1) (low range)
—59
72
μA3.0
98
124
μA5.0
D026
4.5
7.0
μA
2.0
T1OSC Current(1), 32.768 kHz
—5.0
8.0
μA3.0
—6.0
12
μA5.0
D027
0.30
1.6
μA
3.0
A/D Current(1), no conversion in
progress
0.36
1.9
μA5.0
*
These parameters are characterized but not tested.
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1:
The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral
Δ current can be determined by subtracting the base IDD or IPD
current from this limit. Max values should be used when calculating total current consumption.
2:
The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.
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