參數(shù)資料
型號(hào)： PHX8NQ11T
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel TrenchMOS-TM standard level FET
中文描述： 7.5 A, 110 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, TO-220F, FULL PACK-3
文件頁(yè)數(shù)： 8/12頁(yè)
文件大?。?/td> 84K
代理商： PHX8NQ11T
Philips Semiconductors
PHX8NQ11T
N-channel TrenchMOS standard level FET
Product data
Rev. 01 — 14 May 2004
8 of 12
9397 750 13285
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
7.
Isolation characteristics
T
j
= 25
°
C and 150
°
C; V
GS
= 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I
D
= 11 A; V
DD
= 20 V, 50 V and 80 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
03ai98
0
4
8
12
16
0
0.4
0.8
1.2
1.6
VSD (V)
IS
(A)
Tj = 25
°
C
175
°
C
VGS = 0 V
03aj00
0
2
4
6
8
10
0
5
10
15
QG (nC)
VGS
(V)
ID = 11 A
Tj = 25
°
C
VDD = 20 V
50 V
80 V
Table 6:
Symbol
V
isol
Isolation characteristics
Parameter
RMS isolation voltage from all three
terminals to external heatsink.
Capacitance from pin 2 (drain) to
external heatsink.
Conditions
f = 50-60 Hz; sinusoidal waveform;
RH
≤
65%; clean and dust-free.
Min.
-
Typ.
-
Max.
2500
Unit
V
C
isol
f = 1 MHz
-
10
-
pF
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參數(shù)描述
PHX8NQ11T,127 功能描述:MOSFET TRENCHMOS (TM) FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHX9NQ20T 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHX9NQ20T,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHY03APWR 制造商:Texas Instruments 功能描述:
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